GaAs Schottky barrier mixer diodes for the frequency range 1?10 THz

Crowe, T.W.

doi:10.1007/bf01011489

Cited by 67 publications

(40 citation statements)

References 6 publications

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“…On highly doped GaAs substrate (»5×10 18 cm -3 ) with an ohmic contact on the back side, a thin GaAs epi− taxial layer, with a thickness of 300 nm to 1 μm, is grown on the top of the substrate. Holes filled with a metal (Pt) in the SiO 2 insulating layer on top of the epitaxial layer define the anode area (0.25-1 μm) [108]. In order to couple the signal and the LO radiation to the mixer, a long−wire antenna in a 90°corner−cube reflector is used [109,110].…”

Section: Pyroelectric Detectormentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Pyroelectric Detectormentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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“…THz power can be produced from below the THz gap by multiplication up from lower frequencies and such sources [15,16] have been used extensively in space science for remote sensing. On the other (higher frequency) side of the THz gap the frequencies delivered by Although QCLs can deliver significant amounts of power (tens of mW) they do suffer from the disadvantage of having to operate at cryogenic temperatures and are not readily tuneable.…”

Section: Electronic Sourcesmentioning

confidence: 99%

Terahertz Sources

Miles¹,

Naftaly²

2009

Microwave Photonics

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The terahertz (THz) region of the electromagnetic spectrum is commonly defined as that lying at frequencies between 0.1 and10 THz. The frequently-heard expression 'the THz gap' refers to the fact that at these frequencies generation and detection of radiation becomes very difficult using either electronic or optical means. Nevertheless, with the growth of interest in THz research and applications and a great expansion of activities in this area, a large number and variety of sources have been developed and have become widely available. These include THz lasers, laser-activated emitters and electronic devices. Broadly speaking, in applications requiring a continuous-wave narrow-line signal at frequencies below 1 THz, electronic sources predominate. Examples include local oscillators for astronomical instruments and security scanners. On the other hand, lasers and laser-activated emitters are mainly used for broadband THz spectroscopy covering a bandwidth of several THz. This division of functions is likely to persist since electronic THz sources are, by their nature, singlefrequency devices, whereas laser-based sources are either inherently broadband or widely tuneable. Nevertheless, both types of THz emitting devices have found numerous applications, and will be described here. Terahertz Generation from Laser SourcesThe recent rapid expansion of the field of terahertz research and applications owes much of its existence to the development of suitable laser sources and methods of THz generation. These developments fall into two categories: direct emission from far-infrared lasers and optical down-conversion of near-infrared lasers. Owing to the flexibility of the systems and the broad tuning range, down-conversion greatly predominates as the technique of choice, and accounts for the vast majority of work in the THz field.

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“…Starting from an available source of fundamental signal in the frequency range f = 100 − 300 GHz [1], to achieve generation in the THz region one needs: (i) either to perform a multicascade multiplication by using frequency doubling and tripling [1], (ii) or to extract the 5th, or higher order harmonic, of the fundamental signal. For this sake, wide use is made of the nonlinearity of hot-carrier velocity-field (v-E) relation in bulk semiconductors [2][3][4][5][6][7][8], or of the nonlinearities of current-voltage (I-U) and capacitance-voltage (C-U) characteristics in Schottky-barrier structures [1,[9][10][11][12]. These nonlinearities are strongly dependent on the value of the excitation frequency.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures

Adorno

Zarcone

Ferrante

et al. 2004

phys. stat. sol. (c)

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To qualify the feasibility of standard semiconductor materials and Schottky-barrier diodes (SBDs) for THz high-order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal-to-noise ratio are calculated by the Monte Carlo method when a periodic high-frequency large-amplitude external signal is applied to a semiconductor device. Due to very high signal-to-noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials.

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GaAs Schottky barrier mixer diodes for the frequency range 1?10 THz

Cited by 67 publications

References 6 publications

Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

Terahertz Sources

Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures

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