GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability

Sheldon, Matthew; Eisler, Carissa N.; Atwater, Harry A.

doi:10.1002/aenm.201100666

Cited by 53 publications

(34 citation statements)

References 40 publications

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“…Surface passivation of GaAs has been previously studied and shown to suppress, and even eliminate, the surface states, which are formed by segregated arsenic atoms via oxidation, giving rise to surface leakage current. [22][23][24] Both GaAs p þ -i-n þ diodes showed leakage current densities comparable with other high quality GaAs p þ -in þ diodes. Leakage current densities of 5.14 lA/cm 2 6 0.02 lA/cm 2 (for D1) and 1.937 lA/cm 2 6 0.008 lA/cm 2 (for D2) were recorded at the maximum investigated temperature (100 C) and internal electric field (50 kV/cm).…”

Section: A Dark Current Measurementsmentioning

confidence: 75%

High temperature GaAs X-ray detectors

Lioliou

Whitaker

Barnett

2017

Journal of Applied Physics

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Two GaAs p þ -i-n þ mesa X-ray photodiodes were characterized for their electrical and photon counting X-ray spectroscopic performance over the temperature range of 100 C to -20 C. The devices had 10 lm thick i layers with different diameters: 200 lm (D1) and 400 lm (D2). The electrical characterization included dark current and capacitance measurements at internal electric field strengths of up to 50 kV/cm. The determined properties of the two devices were compared with previously reported results that were made with a view to informing the future development of photon counting X-ray spectrometers for harsh environments, e.g., X-ray fluorescence spectroscopy of planetary surfaces in high temperature environments. The best energy resolution obtained (Full Width at Half Maximum at 5.9 keV) decreased from 2.00 keV at 100 C to 0.66 keV at -20 C for the spectrometer with D1, and from 2.71 keV at 100 C to 0.71 keV at -20 C for the spectrometer with D2. Dielectric noise was found to be the dominant source of noise in the spectra, apart from at high temperatures and long shaping times, where the main source of photopeak broadening was found to be the white parallel noise.

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Section: A Dark Current Measurementsmentioning

confidence: 75%

High temperature GaAs X-ray detectors

Lioliou

Whitaker

Barnett

2017

Journal of Applied Physics

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“…2b shows, J 02 , R s and n are unchanged with angle restriction and n is very close to two, indicating that the double diode model is valid. 15,16 In contrast, the J 01 term, which has the same voltage dependence as radiative recombination, shows a 12% decrease with angle restriction, well beyond the error of the t. Thus, by simply changing the optic above the cell to an angle restrictor, we observe a denite reduction in the dark current.…”

Section: Resultsmentioning

confidence: 97%

Experimental demonstration of enhanced photon recycling in angle-restricted GaAs solar cells

Kosten

Kayes²,

Atwater

2014

Energy Environ. Sci.

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For cells near the radiative limit, optically limiting the angles of emitted light causes emitted photons to be recycled back to the cell, leading to enhancement in voltage and efficiency. While this has been understood theoretically for some time, only recently have GaAs cells reached sufficient quality for the effect to be experimentally observed.Here, as proof of concept, we demonstrate enhanced photon recycling and open-circuit voltage (V oc ) experimentally using a narrow band dielectric multilayer angle restrictor on a high quality GaAs cell. With angle restriction we observe a clear decrease in the radiative dark current, which is consistent with the observed V oc increase. Furthermore, we observe larger V oc enhancements for cells that are closer to the radiative limit, and that more closely coupling the angle restrictor to the cell leads to greater V oc gains, emphasizing the optical nature of the effect.

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“…Diffusion lengths of less than 100 nm have been seen for GaP/Si wire heterostructures, 16 but lengths of a few microns are regularly achieved for high quality GaAs and hence a diffusion length range of 10 nm-100 lm was explored. 27 The n-type emitter was set to be 100 nm thick with a dopant density of 9 Â 10 17 cm…”

Section: Model Resultsmentioning

confidence: 99%

Optoelectronic analysis of multijunction wire array solar cells

Turner-Evans

Chen

Emmer

et al. 2013

Journal of Applied Physics

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Wire arrays have demonstrated promising photovoltaic performance as single junction solar cells and are well suited to defect mitigation in heteroepitaxy. These attributes can combine in tandem wire array solar cells, potentially leading to high efficiencies. Here, we demonstrate initial growths of GaAs on Si 0.9 Ge 0.1 structures and investigate III-V on Si 1-x Ge x device design with an analytical model and optoelectronic simulations. We consider Si 0.1 Ge 0.9 wires coated with a GaAs 0.9 P 0.1 shell in three different geometries: conformal, hemispherical, and spherical. The analytical model indicates that efficiencies approaching 34% are achievable with high quality materials. Full field electromagnetic simulations serve to elucidate the optical loss mechanisms and demonstrate light guiding into the wire core. Simulated current-voltage curves under solar illumination reveal the impact of a varying GaAs 0.9 P 0.1 minority carrier lifetime. Finally, defective regions at the hetero-interface are shown to have a negligible effect on device performance if highly doped so as to serve as a back surface field. Overall, the growths and the model demonstrate the feasibility of the proposed geometries and can be used to guide tandem wire array solar cell designs.

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GaAs Passivation with Trioctylphosphine Sulfide for Enhanced Solar Cell Efficiency and Durability

Cited by 53 publications

References 40 publications

High temperature GaAs X-ray detectors

High temperature GaAs X-ray detectors

Experimental demonstration of enhanced photon recycling in angle-restricted GaAs solar cells

Optoelectronic analysis of multijunction wire array solar cells

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