GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing

Bensoussan, Alain; Marec, R.; Muraro, Jean-Luc; Portal, L. Fernández; Calvel, P.; Barillot, C.; Perichaud, Marie-Genevieve; Marchand, L.; Vignon, G.

doi:10.1016/j.microrel.2013.07.019

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…The characteristics of different ions used in this work to investigate SET in the said devices and generated through SRIM [33] are summarized in table 2. The energy values in table 2 correspond to the LET where Bragg's stopping curve attains its peak and is in line with earlier reported experiments [4,10,35,36]. Apart from these, one miscellaneous case of a higher LET value of 1 pc µm −1 from the set of values used by Zerarka et al [7] has been used, which corresponds to a LET of 99.05 MeV cm 2 mg −1 using conversion formulations given by Weatherford [37].…”

Section: Srim Considerations and Initial Victory Tcad Setupsupporting

confidence: 77%

“…The impact of such effects due to xenon ion radiation on DC and RF operation of the AlGaN/GaN HEMTs was examined by Rostewitz et al [3]. Studies involving the impact of multiple heavy ion radiation induced stress on DC and RF biasing conditions were explored by Bensoussan et al [4] on GaAs P-HEMTs. It was reported that the device was immune to heavy ion radiation stress from 420 MeV xenon source, with a linear energy transfer (LET) of 46.6 MeV cm 2 mg −1 .…”

Section: Introductionmentioning

confidence: 99%

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Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Sehra

Kumari

Gupta

et al. 2021

Semicond. Sci. Technol.

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This paper presents an extensive Victory TCAD based assessment to evaluate the device performance under heavy ion particle strike induced single event effects (SEEs). The impact of SEEs on π-shaped AlGaN/GaN HEMT architecture has been compared with conventional AlGaN/GaN HEMT. For validation of simulation, models have been calibrated against the experimental data of in-house fabricated GaN HEMTs on SiC wafers, after which π-shaped architecture is realized using Silvaco's Victory Process simulation tools. Comparisons demonstrate that π-Gate HEMT architecture is a SEE hardened device under different heavy ion particle strike conditions. Further, due to the step modification in the electric field itself, the π-Gate HEMT also exhibits SEE hardened operation under different ambient temperatures. The effect of angled heavy ion particle strike has also been studied for evaluating the device performance with regards to SEE.

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Section: Srim Considerations and Initial Victory Tcad Setupsupporting

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Sehra

Kumari

Gupta

et al. 2021

Semicond. Sci. Technol.

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“…In recent decades, monolithic microwave integrated circuit (MMIC) amplifiers based on GaAs pseudomorphic high electron mobility transistor (PHEMT) technology have been playing an essential role in satellite telecommunications and radar applications [1]. Due to the continuous downscaling of PHEMTs and the low thermal conductivity of GaAs, thermal issues in MMIC amplifiers have become increasingly significant [2].…”

Section: Introductionmentioning

confidence: 99%

Microstructure Characterization and Interfacial Reactions between Au-Sn Solder and Different Back Metallization Systems of GaAs MMICs

Yongfang

Sun

2020

Materials

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GaAs monolithic microwave integrated circuits (MMICs) with different back metallization systems (TiW/Au and Au/Ti/Au) exhibit different problems in the automatic Au-Sn eutectic bonding process, such as edge breakage or excessive voids. In this study, the formation mechanism of the edge breakage and excessive voids were investigated to prevent the damage of the MMICs in mass production scenarios. The microstructure and elemental distribution were studied using a scanning electron microscope and energy-dispersive spectroscopy. The void contents of the brazed region were measured with three-dimensional computed tomography. The top Au layer of the TiW/Au metallization partially dissolved in the melting An-Sn solder. Consequently, liquidus temperature of the solder increased, leading to isothermal solidification with the formation of ζ-Au5Sn in the scrubbing process, which was the reason for the edge breakage. The terminal Au film of the Au/Ti/Au metallization completely dissolved in the melting An-Sn solder. The metallurgical combination was achieved by the formation of the TiAu4 intermetallic compound between the Au-Sn solder and the Ti layer. The wettability of Au-Sn solder on Ti layer should be improved to prevent the formation of the excessive voids.

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Emerging Device Architectures for Space Electronics

Sehra

Raut

Rawal

et al. 2022

HEMT Technology and Applications

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GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing

Cited by 5 publications

References 11 publications

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Microstructure Characterization and Interfacial Reactions between Au-Sn Solder and Different Back Metallization Systems of GaAs MMICs

Emerging Device Architectures for Space Electronics

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