GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Güniat, Lucas; Ghisalberti, Lea; Wang, Li; Dais, Christian; Morgan, Nicholas; Dede, Didem; Kim, Wonjong; Balgarkashi, Akshay; Leran, Jean-Baptiste; Minamisawa, R. A.; Solak, Harun H.; Carter, W. Craig; Morral, Anna Fontcuberta i

doi:10.1039/d1nh00553g

Cited by 4 publications

(1 citation statement)

References 44 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[62] The ensemble of the top-down approach via RIE and a hard mask defined by EBL ensures a high reproducibility of the NW array fabrication virtually without any defects such as missing or askew NWs which is common in bottomup approaches. [63][64][65] A defect-free nature of the NW arrays, however, was crucial to study the general impact of the NW arrays on the neuronal differentiation. Single missing NWs, for example, in P5 NW arrays would appear as P10 NW arrays to individual cells-or even as a flat since the cells might fit completely in between the NWs without any further interaction.…”

Section: Discussionmentioning

confidence: 99%

Generation of Human iPSC‐Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Harberts

Siegmund

Hedrich

et al. 2022

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

In this context, vertically aligned high aspect ratio nanostructures-so-called nanowire (NW) arrays-used as cell culture substrates play an increasingly important role in establishing novel tools for interrogating and stimulating cells on molecular and cellular levels. [4][5][6][7] In recent years, studies testing the unique capabilities of NW arrays have been conducted with a variety of cell types, for instance, basic cell lines such as GPE86, HEK293, and HeLa cells, primary rodent neurons, and (mesenchymal) stem cells (MSCs), to name a few. [8,9] The impact of such studies on medical applications such as drug screenings and neurodegenerative disease studies might, however, be significantly improved by employing more sophisticated cells, namely, cells derived from human induced pluripotent stem cells (iPSCs). [10] Human iPSC technologies have changed the way of preclinical research and application by enabling human (patientspecific) in vitro models without restrictions in cell availability. [11] Not only political and ethical controversies raised by using embryonic stem cells (ESCs) are avoided, but also all major cell types including blood-brain barrier models and brain organoids can be generated. [12,13] For studying neurodegenerative diseases such as Alzheimer's or Parkinson's, neurons derived from human iPSCs are of particular interest since adequate models are otherwise scarcely available. [14] Apart from ESCs,

show abstract

Section: Discussionmentioning

confidence: 99%

Generation of Human iPSC‐Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Harberts

Siegmund

Hedrich

et al. 2022

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

show abstract

Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers

Sharma

Malathi

Das

et al. 2023

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range

Nakama,

Yukimune,

Kawasaki

et al. 2023

Applied Physics Letters

View full text Add to dashboard Cite

Semiconducting nanowires (NWs) fabricated from III–V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The NWs are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates with SiO2 mask holes. The nucleation and growth of the GaAs nanowires' core are carried out by Ga-induced vapor–liquid–solid growth at the open holes. Finely controlled, vertically aligned, regular core-multishell NWs with uniform wire length and diameter are obtained with a 96% yield and targeted nitrogen concentrations of 0%, 2%, and 3%. The GaInNAs NWs exhibit a spectral red shift relative to the GaAs NWs' peak. Their emission wavelength increases with the N content reaching up to 1.26 μm, which makes them a promising tool in telecommunication light sources.

show abstract

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Abstract: Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60nm holes). In fact, arrays are traditionally manufactured using electron-beam...

Cited by 4 publications

References 44 publications

Generation of Human iPSC‐Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Generation of Human iPSC‐Derived Neurons on Nanowire Arrays Featuring Varying Lengths, Pitches, and Diameters

Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers

GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range

Contact Info

Product

Resources

About