1995
DOI: 10.1109/68.376802
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GaAs MQW modulators integrated with silicon CMOS

Abstract: We demonstrate integration of GaAs-AIGaAs multiple quantum well modulators to silicon CMOS circuitry via flipchip solder-bonding followed by substrate removal. We obtain $J.5~0 device yield for 32 x 32 arrays of devices with 15 micron solder pads. We show operation of a simple circuit composed of a modulator and a CMOS transistor.

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Cited by 233 publications
(62 citation statements)
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“…In this system, optical connections are made directly from the surface of the silicon chip to the other switching machines, avoiding entirely the usual hierarchy of repeatered electrical interconnections. Such radical approaches are possible because of emerging technology that allows large numbers of high-speed optical interconnections directly in and out of silicon chips [7].…”
Section: Introductionmentioning
confidence: 99%
“…In this system, optical connections are made directly from the surface of the silicon chip to the other switching machines, avoiding entirely the usual hierarchy of repeatered electrical interconnections. Such radical approaches are possible because of emerging technology that allows large numbers of high-speed optical interconnections directly in and out of silicon chips [7].…”
Section: Introductionmentioning
confidence: 99%
“…Although some optoelectronic integration techniques, such as solderbump bonding, 16 allow optoelectronics to be placed directly above silicon circuitry, thereby slightly altering trace-line routing conditions, the assumption made here was that the cluster would be too densely packed to allow logic to be placed between windows and that trace lines would be the only features present within the cluster.…”
Section: Interconnection Modelmentioning
confidence: 99%
“…Although, in principle, transistors may be placed within and below the cluster, depending on the type of technology used, 16 it was assumed that this would be a region where trace lines would be most densely packed and hence void of transistors. It follows that the number of transistors is given by…”
Section: Interconnection Modelmentioning
confidence: 99%
“…With this term we refer to planar electronic circuits with optical input-output capability from their surface. ͑The term smart pixels 73 is also used to describe such device planes, but we find that term to have restrictive connotations and thus avoid using it.͒ For instance, flip-chip bonding of self-electrooptic-effect devices ͑SEED's͒ on silicon 74,75 or other smart-pixel technologies 76 -84 would allow the construction of such device planes. A device plane may actually consist of several active device layers sandwiched together so as to constitute an effective single device plane.…”
Section: ͞2mentioning
confidence: 99%