GaAs monolithic components development for Q-band phased array application

Aust, M.V.; Wang, H.; Carandang, R.; Tan, K. H.; Chen, C.H.; Trinh, T.Q.; Esfandiari, R.; Yen, H.C.

doi:10.1109/mwsym.1992.188081

Cited by 10 publications

(4 citation statements)

References 9 publications

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“…In the meantime, the inductive nature of the device impedance at the ON-state was also compensated. While such approach solved the issue on the poor isolation of the conventional resonated HEMT configurations [11][12][13], the operation bandwidth could be limited. This is mainly due to the compensation of the imaginary parts of the impedance at ON-and OFF-states is achieved through frequency-dependent element in the impedance transformation network, namely, the open stub shown in Figure 4a.…”

Section: Spdt Switch With Impedance Transformation Networkmentioning

confidence: 99%

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

2020

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In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.

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Section: Spdt Switch With Impedance Transformation Networkmentioning

confidence: 99%

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

2020

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“…Several passive HEMT SPDT shunt configurations were reported [6]- [9]. They were either directly shunt to ground [6], [7] or shunt with a quarter-wavelength line [9]. In order to compare the conventional resonant method and our proposed method in designing MMW switches using the shunt configuration, a four-finger 200-m passive HEMT is studied in each case at 40 GHz.…”

Section: Comparison With Resonant-type Switchesmentioning

confidence: 99%

“…However, at higher frequencies, the parasitic capacitance (mainly the drain-to-source capacitance ) will degrade the isolation performance significantly. Most MMW monolithic passive HEMT switches reported to date were parallel resonant-type FET switches [6], [7], with the isolation performance lower than 30 dB. A series resonant-type -band SPDT passive HEMT switch demonstrated 3.9-dB insertion loss and 41-dB isolation at 59 GHz with a chip size of 3.3 1.7 mm [8].…”

Section: Introductionmentioning

confidence: 99%

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Lin

Wang

Niu

et al. 2003

IEEE Trans. Microwave Theory Techn.

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This paper proposes a new design method for passive FET switches in the millimeter-wave (MMW) regime. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off state at high frequencies. By means of this new design concept, aand -band monolithic-microwave integrated-circuit single-pole double-throw (SPDT) switches using a GaAs pseudomorphic high electron-mobility-transistor process are demonstrated. The -band SPDT switch has a measured isolation better than 30 dB for the off state and 2-dB insertion loss for the on state from 38 to 45 GHz, while the -band switch also shows a measured isolation better than 30 dB for the off state and 4-dB insertion loss for the on state from 53 to 61 GHz. The obtained isolation performance using this design approach outmatches previously published FET switches in the MMW frequency range.Index Terms-High electron-mobility transistor (HEMT), millimeter wave (MMW), monolithic microwave integrated circuit (MMIC), switch.

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“…These are ferrite [2] and electronic switch phase shifters. Electronic switch phase shifters that use digital phase shift steps can be basically categorised into four types [3,4], which are switched line [5,6], reflection [7,8], loaded line [9,10] and switched network [3,11] phase shifters. All of these types have been investigated in detail from different aspects [3,4,9].…”

Section: Introductionmentioning

confidence: 99%

Triple stub circuit topology as simultaneous insertion phase, amplitude and impedance control circuit for phased array applications

Ünlü¹,

Demır

Akın

2012

IET Microwaves, Antennas &Amp; Propagation

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This study shows that the well-known triple stub circuit topology can also be used for controlling the insertion phase and amplitude of a given signal simultaneously, as well as preserving its impedance transformation ability. The triple stub circuit topology, which is nothing but an extension of the conventional double stub loaded-line phase shifter, results in one more degree of freedom to its solution when it is solved for its insertion phase. This additional degree of freedom not only brings the impedance transformation ability, but also allows tuning the circuit into a resonator at the frequency of interest whose quality factor can also be adjusted. This result is employed for controlling the amplitude of the output signal to any desired level, which is achieved using only low-loss transmission lines and shown to be true for any non-zero transmission line losses. The measurements of the fabricated sample circuits verify that it is possible to control simultaneously the insertion phase between 0 and 3608 and the amplitude from 20.8 to ,215 dB, whereas the input return loss is always kept better than 215 dB as an example of their impedance transformation capabilities.

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GaAs monolithic components development for Q-band phased array application

Cited by 10 publications

References 9 publications

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Millimeter-wave MMIC single-pole-double-throw passive HEMT switches using impedance-transformation networks

Triple stub circuit topology as simultaneous insertion phase, amplitude and impedance control circuit for phased array applications

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