GaAs-modules for power generation at W-band frequencies

CAD for mm-wave resonators

“…frequencies more and more the whole oscillator behaviour. An efficient control and minimization of the parasitics elements has been achieved by the module technique which has proved to be applicable up to about 150 GHz [2,3]. For this case the whole encapsulation structure for the active device is fabricated in a monolitical step by the help of photoresist technology leading to a high reproducibility of the parasitic elements.…”

“…The used device simulation includes avalanche multiplication and carrier generation by tunnel effect als well as ohmic contact losses and the device temperature for an arbitrary doping concentration of the diode [6]. For the device structure a single-drift flat-profile diode is chosen which has been applied already with success at W-band frequencies [3,7]. The device consists of a p+nn+ structure with a 400 nm wide active region and a doping concentration of 2*1017 cm-3.…”

“…have been applied with success in nurnerous variations in the mm-wave region. In contrast to active devices, where normally a large number of different programmes for simulation and design exist, models for waveguide resonator structures are relatively rare in the literature [1][2][3]. Therefore, up to nlON the main procedure for the realization of mm-wave oscillators is scaling from known str ¶.ictures at lower frequencies and the principle of trial and error.…”

Experimental demonstration of GaN IMPATT diode at X-band

“…mpact ionization avalanche time transit (IMPATT) diodes 1,2) have been used for high-power microwave and millimeter-wave oscillators at frequencies ranging from 10 to 300 GHz. [3][4][5][6][7][8][9][10][11][12][13] They are the most powerful solidstate sub-THz sources, and silicon (Si) and gallium arsenide (GaAs) IMPATT diodes achieved Watt-class continuous operation. The peak output power and operating frequency of an IMPATT diode are limited by material properties, such as carrier saturation velocity and critical electric field.…”