Experimental demonstration of GaN IMPATT diode at X-band

Kawasaki, Seiya; Ando, Yoshinobu; Deki, Manato; Watanabe, Hirotaka; Tanaka, Atsushi; Nitta, Shugo; Honda, Yoshio; Arai, M.; Amano, Hiroshi

doi:10.35848/1882-0786/abe3dc

Cited by 16 publications

(6 citation statements)

References 31 publications

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“…Limited by the avalanche current and the lack of a heat sink, the frequency was much below the theoretical predictions. Later, Kawasaki et al mounted the GaN IMPATT diode on a copper heat sink in a pill package and operated the device under 500 ns pulse mode (figure 9) [181]. The device showed a maximum oscillation frequency of 9.5 GHz at a current density of 2.2 kA cm −2 , offering a peak output power of 14.45 mW.…”

Section: Impact Ionization Avalanche Time Transit Diodes (Impatts)mentioning

confidence: 99%

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga2O3. For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

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Section: Impact Ionization Avalanche Time Transit Diodes (Impatts)mentioning

confidence: 99%

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Woo,

Bian,

Noshin

et al. 2024

J. Phys. Mater.

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“…[10][11][12]), GaN-based IMPATT diodes promise to offer exceptional levels of performance. Recent demonstrations of IMPATT-based oscillations have been achieved [13][14][15]. We have recently achieved the first direct measurement of negative differential resistance in GaNbased IMPATTs, based on a combination of pulsed bias operation and high-quality edge termination to satisfactorily suppress parasitic leakage currents.…”

Section: Exploitation Of Impact Ionizationmentioning

confidence: 99%

Electric field control and exploitation in III-N devices

Fay,

Duan,

Zhu

et al. 2024

Quantum Sensing and Nano Electronics and Photonics XX

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Wide (and ultra-wide) bandgap III-N semiconductors are promising for electronic devices operating at high power levels and in harsh environments, as well as for sensors such as UV detectors. The promise of these materials derives from a combination of their excellent carrier transport properties and the ability to operate at high internal electric fields. However, many current-generation devices do not fully exploit the material limits, and thus performance is below the fundamental performance limits expected from the material properties. Recent work on polarization-graded structures for internal electric field mitigation to enhance the breakdown voltage in HEMTs, cost-effective edge termination strategies for vertical power devices, and devices exploiting impact ionization and avalanche in GaN will be discussed. For example, we find that the use of polarization-grading can decrease the peak electric field in the channel, increase the breakdown voltage, and improve the power scaling of III-N based HEMTs, without the use of field plates that limit high-frequency performance; experimentally-validated power-added efficiency of 50% at 94 GHz has been achieved. In vertical devices, device high-field operation is often limited by edge effects; we report a strategy for edge termination that provides a large process window that is tolerant of both fabrication processing and epitaxial layer thickness and doping variations, and enables robust avalanche operation to be achieved in practice. In addition to increased breakdown voltage, the ability to harness impact ionization and avalanche for device functionality is also critical for avalanche photodiodes and negativeresistance oscillators such at IMPATT diodes. We report the recent demonstration of experimentally-measured negative resistance at microwave frequencies from GaN-based IMPATT diodes, illustrating direct exploitation of the high-field operation of GaN pn junctions for advanced functionality. These approaches are amenable to extension to ultra-wide bandgap III-N materials, particularly for applications in quantum sensing and ultra-high power density electronics.

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“…Fermi statistics (fermi) and the effects of band gap narrowing (bgn), interface charges, charge trapping, passivation, mobile space charge, etc., were also considered in the simulation model. Initially, the entire simulation model was calibrated against the experimental data of earlier published reports [75,76]. The same DC simulation study was also repeated for the vertical SDR Schottky barrier and vertical GaN DDR quasi-Read IMPATT structures for the sake of comparison.…”

Section: Steady-state DC Characteristicsmentioning

confidence: 99%

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

et al. 2023

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A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introduced at different positions of the top AlGaN barrier layer for realizing different sheet carrier density profiles at the 2-DEG channel; the resulting devices are equivalent to high–low, low–high and low-high–low quasi-Read structures. The DC, large-signal and noise simulations of the HEM-ATTs were carried out using the Silvaco ATLAS platform, non-sinusoidal-voltage-excited large-signal and double-iterative field-maximum small-signal simulation models, respectively. The breakdown voltages of the devices estimated via simulation were validated by using experimental measurements; they were found to be around 17–18 V. Under large-signal conditions, the series resistance of the device is estimated to be around 20 Ω. The large-signal simulation shows that the HEM-ATT source is capable of delivering nearly 300 mW of continuous-wave peak power with 11% conversion efficiency at 1.0 THz, which is a significant improvement over the achievable THz power output and efficiency from the conventional vertical GaN double-drift region (DDR) IMPATT THz source. The noise performance of the THz source was found to be significantly improved by using the quasi-Read HEM-ATT structures compared to the conventional vertical Schottky barrier IMPATT structure. These devices are compatible with the state-of-the-art medium-scale semiconductor device fabrication processes, with scope for further miniaturization, and may have significant potential for application in compact biomedical spectroscopy systems as THz solid-state sources.

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Experimental demonstration of GaN IMPATT diode at X-band

Cited by 16 publications

References 31 publications

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Electric field control and exploitation in III-N devices

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy

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