GaAs MMIC Low Noise Amplifier With Integrated High-Power Absorptive Receive Protection Switch

Rao, Ch. V. N.; Ghodgaonkar, D.K.; Sharma, N. Gireesh

doi:10.1109/lmwc.2018.2877148

Cited by 14 publications

(8 citation statements)

References 7 publications

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“…The right process technology is vital to meet the n goals and expected level of performance of integrated transceiver-transponder parametric simulation models of a foundry library required to be scalable to allow for hardware and dynamic link library components design adaptat integrated 5G to provide high sensitivity and selectivity over multiband, multi-standards heterogeneous communication applications end LNA should be designed and zed to give high gain and linearity ov required frequency band and process technologies [14], [15] The pertinent design, modeling and simulation results are presented in Section IV. Section V concludes the…”

Section: Active Device Technology Selectionmentioning

confidence: 99%

“…parametric simulation models of a foundry library required to be scalable to allow for hardware-in and dynamic link library components design adaptat satellite receivers need to provide high sensitivity and selectivity over standards heterogeneous . To accomplish this, the end LNA should be designed and zed to give high gain and linearity ov required frequency band and process technologies [14], [15] and silicon-germanium Heterojunction Bipolar Transistors (HBTs) [16], technology offers a high ded efficiency performance with an applications (including satellite, radar and microwave radio optimization of the a critical requirement LNA reported in this paper uses the technology from the WIN foundry library. The InGaAs pHEMT is known to outstanding noise performance, lower cost cies [19].…”

Section: Active Device Technology Selectionmentioning

confidence: 99%

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8-12 GHz pHEMT MMIC Low-Noise Amplifier for 5G and Fiber-Integrated Satellite Applications

Uko

Ekpo

2020

IREASE

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The fifth-generation (5G) radio access technology promises to revolutionise integrated earth-space communications applications for ubiquitous, seamless and broadband services. The assigned sub-6 GHz and millimetre-wave 5G frequencies require the sensitivity of the receiver front-end subsystem(s) to detect and amplify the desired signal at a noise floor of less than -90 dBm for a cost-effective infrastructure deployment. This paper presents a broadband Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) design based on a 0.15 µm gate length Indium Gallium Arsenide (InGaAs) pseudomorphic high electron mobility transistor (pHEMT) technology for 5G and fiber-integrated satellite communications applications. The designed three-stage 8-12 GHz LNA implements a common-source topology. The MMIC LNA subsystem performance demonstrates an industry-leading in-band gain response of 40 dB; a noise figure of 1.0 dB; and a power dissipation of 43 mW. For a constant bandwidth receiver, the sensitivity changes by approximately 1.5 dB over the operating satellite signal frequency. Similarly, for a variable bandwidth receiver, the sensitivity changes by approximately 1.5 dB over the channel bandwidth. Moreover, the sensitivity margin of the designed LNA is 40 dB and this holds a great promise for real-time radio access component-level reconfiguration applications.

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Section: Active Device Technology Selectionmentioning

confidence: 99%

Section: Active Device Technology Selectionmentioning

confidence: 99%

8-12 GHz pHEMT MMIC Low-Noise Amplifier for 5G and Fiber-Integrated Satellite Applications

Uko

Ekpo

2020

IREASE

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“…Nowadays, low-noise amplifiers (LNAs), as the key device of radio frequency (RF) receiver front-end, play an extremely important role in aerospace, electronic countermeasures, radar systems, mobile communications and long-distance remote sensing, etc. [ 1 , 2 , 3 , 4 ]. Moreover, with the rapid development of RF and 5G technology, development for monolithic microwave integrated circuit (MMIC) LNAs has become the choice of many famous foundries in the world [ 5 ], which shows that the investigation of MMIC LNAs is an interesting topic.…”

Section: Introductionmentioning

confidence: 99%

Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

Lin

Jia

Wu³

et al. 2022

Micromachines

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In order to investigate the temperature behavior for monolithic microwave integrated circuits (MMICs) under alpine conditions, the performance parameters of a 0.4–3.8 GHz gallium arsenide (GaAs) enhancement pseudomorphic high-electron-mobility transistor (E-pHEMT) low-noise amplifier (LNA) are tested at different temperatures. The typical temperatures of −39.2 °C, −32.9 °C, −25.3 °C, −11.3 °C, −4.9 °C, 0 °C and 23 °C are chosen as the alpine condition. The major performance indexes including the direct current (DC) characteristics, S-parameters, stability, radio frequency (RF) output characteristics, output third-order intersection point (OIP3) and noise figure (NF), which were inspected and analyzed in detail. The results show that the DC characteristics, small-signal gain (S21), RF output characteristics and NF all deteriorate with the rising temperature due to the decrease in two-dimensional electron gas mobility (). Contrary to this trend, the special design makes stability and OIP3 increase. For further application of this MMIC LNA under alpine conditions, several measures can be utilized to remedy performance degradation. This paper can provide some significant engineering value for the reliable design of MMICs.

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“…The requirements of high-quality and low-cost wireless local area network (WLAN) applications cause strong efforts for the development of radio frequency (RF) front-end modules (FEMs). As an essential part of the RF FEM, the receiver low-noise amplifier (LNA) generally integrates a single-pole double-throw (SPDT) switch for transmitting and receiving paths because the WLAN standards are time division duplex (TDD) communication systems [1,2]. Furthermore, to emerge short-range wireless communication markets, such as WLAN and Bluetooth, the feasibility of integrating a single-pole triple-throw (SP3T) switch into a front-end receiver has been pointed out for the 2.4-2.5 GHz frequency range [3,4].…”

Section: Introductionmentioning

confidence: 99%

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

et al. 2022

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This paper describes a 2.4-GHz fully-integrated front-end receiver including a single-pole triple-throw (SP3T) switch and a low-noise amplifier (LNA) with bypass function, which was fabricated in a 0.25 μm GaAs pHEMT process. An asymmetrical SP3T switch architecture is incorporated to enable the receiver to operate in four modes. The exploration of impedance and voltage gain behavior of the proposed LNA help to establish the matching network and alleviate the trade-off between noise figure (NF) and gain performance. In LNA high gain mode, the implemented front-end receiver shows 1.7 dB of NF and 6dBm of input third-order intercept point (IIP3) with 20 dB of power gain drawing 11 mA of current from 5 V power supply at 2.4 GHz. All input and output return loss had exceeded 10 dB with fully on-chip impedance matching network. In bypass mode, the measured insertion loss of typically 7.5 dB is achieved.

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GaAs MMIC Low Noise Amplifier With Integrated High-Power Absorptive Receive Protection Switch

Cited by 14 publications

References 7 publications

8-12 GHz pHEMT MMIC Low-Noise Amplifier for 5G and Fiber-Integrated Satellite Applications

8-12 GHz pHEMT MMIC Low-Noise Amplifier for 5G and Fiber-Integrated Satellite Applications

Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA

A 2.4-GHz Fully-Integrated GaAs pHEMT Front-End Receiver for WLAN and Bluetooth Applications

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