GaAs MMIC Chip-sets for mobile communication systems with on-chip ferroelectric capacitors

Ueda, T.; Noma, A.; Ueda, Daisuke

doi:10.1080/10584589508220220

Cited by 30 publications

(4 citation statements)

References 4 publications

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“…Great efforts have been made to integrate epitaxial functional oxides with III-V semiconductor GaAs because of their widely promising applications (Liu et al, 2003;Ueda et al, 2006;Zheng et al, 2006;Wei et al, 2011;Köç et al, 2013;Galatage et al, 2014;Mazet et al, 2015;Lee, 2016;Kornblum et al, 2017;Zhou et al, 2017;Young et al, 2019;Verhulst et al, 2020;Zhou et al, 2020;Dalal et al, 2021). But there still exists some challenges for fabricating functional-oxide/GaAs heterostructures with excellent interfacial quality, such as the large lattice mismatch and interdiffusion of As and Ga atoms.…”

Section: Introductionmentioning

confidence: 99%

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Zhou

Deng

et al. 2022

Front. Mater.

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The integration of metal oxides and GaAs semiconductors is quite attractive for its potential applications, but interfacial diffusion and lattice mismatch usually cause huge challenges toward achieving high-performance electronic devices. In this article, we reported a thin layer of epitaxial TiO2 (110) on a GaAs (001) substrate with significant compressive strain, lattice distortion, and oxygen vacancies, where the oxygen vacancies proved to be the critical factor to induce the compressive strain and lattice distortion. In this case, the lattice mismatches between this compressed TiO2 (110) and GaAs (001) surface were calculated to be as small as 1.3 and 0.24% along the [110] and [001] orientations of TiO2, respectively. Further, no Ga-oxides or As-oxides were found at the interface, indicating that the TiO2 layer inhibited the diffusion of Ga and As atoms effectively. In summary, TiO2 film can be grown epitaxially on GaAs (001) substrates with non-negligible compressive strain, lattice distortion, oxygen vacancies, and a high-quality interface. This study also provides an approach to integrate different functional oxides on TiO2-buffered GaAs for various GaAs-based electronic devices with higher reliability and performance.

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Section: Introductionmentioning

confidence: 99%

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Zhou

Deng

et al. 2022

Front. Mater.

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“…D ue to their high dielectric permittivity, low dielectric loss, good thermal stability, and favorable high frequency characterisitics, barium strontium titanate (Ba x Sr 1-x TiO 3 , BST) thin films have been attracting attention for decades for their applications in electronic components such as bypass capacitors, IR detectors, dynamic random access memories (DRAMs), and tunable microwave devices [1], [2]. The tunability of the dielectric permittivity with applied electric field with a relative high figure of merit (FOM = % tunability/loss tangent) make BST thin films especially appealing for applications in high data rate communication systems working at microwave frequencies [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

The dielectric properties of Ba_0.6Sr_0.4Cr_xTi_1-xO₃ thin films prepared by pulsed laser deposition

Cheng

et al. 2008

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Ba(0.6)Sr(0.4)Cr(x)Ti(1-x)O(3) (BSCT) films were prepared by pulsed laser deposition with the value of x varying from 0 mol% to 2.0 mol%. X-ray diffraction analysis detected an increase in the lattice parameters, which could be due to the characteristics of the growth process. Dielectric properties and tunability of the BSCT films were measured. The dissipation factors of the films decreased with increasing Cr-concentration. The highest figure of merit (FOM) value of 33.3 was obtained in 1.0 mol%-doped BSCT film. As a result, the effect of Cr doping is positive.

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“…These include a high dielectric constant that increases the capacitance while reducing the size of the devices, low dielectric loss, excellent electrical properties that minimize the power consumption, good thermal/chemical stability, and good high-frequency characteristics. [3][4][5][6][7][8] These properties can be achieved by both the ferroelectric and paraelectric phases of the BST materials. For realization of such device applications, it is important to develop a paraelectric film material that shows no aging or fatigue behaviors with low dielectric loss, high dielectric constant, and better electrical properties.…”

mentioning

confidence: 99%

Effect of MgO Dopant on the Microstructure and Dielectric Properties of rf-Sputtered Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] Thin Films

Chiu

Lee²,

Shieu

2005

J. Electrochem. Soc.

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MgO-doped Ba 0.5 Sr 0.5 TiO 3 ͑BST͒ thin films were synthesized by radio-frequency ͑rf͒ magnetron sputtering at substrate temperature 750°C using single-phase targets with different MgO contents ranging from 0 to 5 mol %. Microstructure, surface morphology, dielectric constant, and leakage current of the MgO-doped BST films were characterized to understand the influence of the MgO dopant on film properties. Polycrystalline and single-phase solid solution films with a dense microstructure were obtained in all deposition conditions. The electrical and dielectric properties of the BST-containing capacitors are both found to be improved significantly by doping MgO in the BST films. The leakage current density of the 5 mol % MgO-doped BST capacitors is nearly two orders of magnitude lower and the dielectric constant is about 45% times higher than that of the undoped BST capacitors. It is speculated that the increase in the dielectric constant is due to the formation of electric dipole Mg Ti 2− −V 0 2+ complex resulting in an increase in the residual stress, whereas the improvement in the leakage properties is attributed to the oxygen vacancies by MgO doping, resulting in a reduced electron concentration in the materials.

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GaAs MMIC Chip-sets for mobile communication systems with on-chip ferroelectric capacitors

Cited by 30 publications

References 4 publications

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

The dielectric properties of Ba_0.6Sr_0.4Cr_xTi_1-xO₃ thin films prepared by pulsed laser deposition

Effect of MgO Dopant on the Microstructure and Dielectric Properties of rf-Sputtered Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] Thin Films

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GaAs MMIC Chip-sets for mobile communication systems with on-chip ferroelectric capacitors

Cited by 30 publications

References 4 publications

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

The dielectric properties of Ba0.6Sr0.4CrxTi1-xO3 thin films prepared by pulsed laser deposition

Effect of MgO Dopant on the Microstructure and Dielectric Properties of rf-Sputtered Ba[sub 0.5]Sr[sub 0.5]TiO[sub 3] Thin Films

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The dielectric properties of Ba_0.6Sr_0.4Cr_xTi_1-xO₃ thin films prepared by pulsed laser deposition