GaAs HBT for power applications

Berger, O.

doi:10.1109/bipol.2004.1365743

Cited by 5 publications

(2 citation statements)

References 4 publications

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“…Cost Issues: There has been an everlasting debate on the cost of SiGe BiCMOS in comparison to III-V device technologies (e.g., InGaP/GaAs) for power amplification in the frequency range where both types of devices are capable of performing the same functions [25]. One of the major supports for the claim that SiGe BiCMOS is not less expensive than the III-V counterpart is that more chip area will be consumed by SiGe HBTs in order to achieve the same RF power level with comparable PAE (other supports include the processing complexity of SiGe BiCMOS).…”

Section: Further Discussionmentioning

confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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Abstract-The base-region optimization of SiGe power heterojunction bipolar transistors (HBTs) for high-frequency microwave power amplification is investigated. It is found that employing a heavily doped base region in conjunction with a high Ge content of proper profile can effectively improve the large-signal power-gain values of SiGe HBTs while maintaining their high breakdown voltages and thus allow them to be efficiently operated with high power at higher microwave frequencies. More importantly, with such a base-region optimization, not only lateral-scaling requirements can be relaxed but also a common-base configuration for power amplification using these devices can be favored, which further enhances the power-gain values of SiGe power HBTs at high frequencies. Load-pull experimental results are presented to show the highest figure-of-merit power performance of SiGe power HBTs with an optimized base region. The power performance of SiGe power HBTs operated at X -band with different base-region designs was also compared to illustrate the significant benefits that result from the base-region optimization.Index Terms-Common base (CB), doping profile, figureof-merit (FOM), load pull, microwave, power amplification, power gain, SiGe heterojunction bipolar transistors (HBTs).

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Section: Further Discussionmentioning

confidence: 99%

Base-region optimization of SiGe HBTs for high-frequency microwave power amplification

Jiang

2006

IEEE Trans. Electron Devices

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“…Because of the low breakdown voltages for fast CMOS devices, other technologies, such as GaAs HBT [26], [27], Si bipolar [28], [29], SiGe HBT [30]- [32], and low-voltage LDMOS [33], [34], have so far dominated the small-size PAs. See [35] for CMOS vs. GaAs comparison for mobile phone PAs, and [36] for comparison of different bipolar technologies for similar applications.…”

Section: A Cmos For Wireless Socmentioning

confidence: 99%

A Review of Watt-Level CMOS RF Power Amplifiers

Johansson

Fritzin

2014

IEEE Trans. Microwave Theory Techn.

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Abstract-This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and state-of-the-art results in the literature. To reach watt-level output power from a single-chip CMOS PA, two main strategies can be identified: use of high supply voltage, and use of matching and power combination. High supply voltage limits are closely related to device design in the fabrication process. However, the maximum operating voltage can be improved by amplifier class selection, circuit solutions, and process modifications or mask changes. High output power can also be reached by the use of on-chip matching and power combination, commonly using on-chip transformers. Reliability often sets the limits for the PA design, and PA degradation mechanisms are reviewed. A compilation of state-of-the-art published results for linear and switched wattlevel PAs, as well as a few fully integrated CMOS PAs, is presented and discussed.

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