GaAs Growth Using TMG and AsCl3

Abstract

A new GaAs vapor-phase epitaxial (VPE) technique using trimethylgallium (TMG) and arsenic trichloride (AsC13) has been developed. This VPE is free from the source instability in chloride VPE and fatally toxic arsine (ASH3) in hydride and metalorganic VPE. The growth reaction is based on the gallium chloride transport method. Growth rates of 300-4000 A/rain were obtained at growth temperatures between 650 ~ and 780~ At III/V ratios below 2.3, the growth rate increased as the TMG flow rate increased and the AsC13 flow rate decreased. The growth rate was independent of the temperature in the gas mixing region of the reactor. High purity n-GaAs with a 77 K mobility of 36,000 cm~/Vs was obtained.

Coherent Anti-Stokes Raman Scattering Measurements of Group V Hydride and Trimethylgallium Decomposition in Organometallic Vapor Phase Epitaxy

“…A number of investigations cbncerned with MOVPE chemistry have been been reported in recent years using various spectroscopic techniques [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Among those coherent anti-Stokes Raman scattering (CARS) [14][15][16] has certain advantages.…”