Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE)

“…The removal of the carbene is more difficult and leads to carbon incorporation [192]. Fluorine reacts with carbon to form molecules with similar chemical stability to alkanes and has not been successfully used as a carbon source.…”

Recent advances in metal-organic vapor phase epitaxy

“…The typical carbon levels in MOVPE-based GaAs are less than 10l6 ~m -~, or less than a ppm. A probable route to carbon incorporation would be the formation of the reactive carbene, CH2, which would form two bonds to the growing surface, ensuring the incorporation of carbon into the growing layer [45], [46]. The formation of this carbene can occur through the radical attack of CH3 radicals on the gas phase (CH3)3Ga molecules or surface resident CH3 groups.…”

Mechanism of doping gallium arsenide with carbon tetrachloride during organometallic vapor-phase epitaxy

“…[1][2][3] Carbon is the preferred p-type dopant due to its low diffusivity compared to zinc and beryllium. [8][9][10][11][12][13] Under certain conditions, essentially all the carbon deposited from CCl 4 inserts into the acceptor sites of GaAs. [8][9][10][11][12][13] Under certain conditions, essentially all the carbon deposited from CCl 4 inserts into the acceptor sites of GaAs.…”