GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Abramkin, D. S.; Petrushkov, M. O.; Putyato, М. А.; Semyagin, B. R.; Emelyanov, E. A.; Преображенский, В. В.; Гутаковский, А. К.; Шамирзаев, Т. С.

doi:10.1134/s1063782619090021

Cited by 7 publications

(2 citation statements)

References 17 publications

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“…The displayed values are obtained with accuracy better than 10 −2 %.ple S with at low T is thermally quenched via electronthermalization from X xy in IL to, most likely, nitrogen complexes present in the structure from GaP growth[73], having escape energies of 8 ± 2 meV, in good agreement with Ref.[74]. For larger temperatures, the dominant mechanism of quenching with escape energies ∼60 meV is most likely the escape of electron from X xy -valley in IL to X-valley in bulk (41 meV determined from 8-band k • p, 43 ± 7 meV observed in Ref [75]…”

supporting

confidence: 87%

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Steindl,

Sala,

Alén

et al. 2021

Preprint

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Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and temperature modulated time-resolved photoluminescence. Studying this material system is important in view of the ongoing implementation of such QDs for nano memory devices. Our set of structures contains a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow us to discern the common spectral features around the emission energy of 1.8 eV related to GaAs quantum well and GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. The distribution suggests the coexistence of momentum direct and indirect QD transitions. Moreover, based on the considerable tunability of the dots depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor (CMOS) platforms, since GaP is almost lattice-matched to Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction topology.

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confidence: 87%

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Steindl,

Sala,

Alén

et al. 2021

Preprint

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“…is merger is becoming increasingly important for future high-speed technologies [1]. Due to the indirect energy band of Si, the main focus is on the monolithic growth of direct-band III-V binary compounds on an Si substrate [2].…”

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confidence: 99%

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Saidov

Saparov

Usmonov

et al. 2021

Advances in Condensed Matter Physics

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Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.

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The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application

Zhang

Wei

Liu

et al. 2022

Materials Today Physics

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GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Cited by 7 publications

References 17 publications

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application

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GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Cited by 7 publications

References 17 publications

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

On the importance of antimony for temporal evolution of emission from self-assembled (InGa)(AsSb)/GaAs quantum dots on GaP(001)

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1

The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application

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Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$