The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application

Zhang, Shaohui; Wei, Songrui; Liu, Zeng; Li, Tianzhong; Li, Chaozhou; Huang, Xiang Long; Xie, Zhongjian; Al‐Hartomy, Omar A.; Al‐Ghamdi, Ahmed A.; Wageh, S.; Gao, Jingyan; Tang, Yuxuan; Wang, Hao; Wang, Qiuliang; Zhang, Han

doi:10.1016/j.mtphys.2022.100812

Cited by 20 publications

(2 citation statements)

References 204 publications

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“…In view of the device structure remold, Vieira et al [152] improved the photo-sensing performance of the Ga 2 O 3 Schottky photodiode by coupling two planar diodes; the I photo increased as much as 186 times, and the R and D * also improved significantly. In addition, from two points of materials and devices, the modification of the Schottky barrier interface (concerning the basic feature of Schottky photodiode) [153] and the study on defect physics (concerning trapping) in Ga 2 O 3 [154][155][156][157][158][159] contribute to the boom in next-generation functional DUV photodetectors in actual applications [4,160,161]. In a photodetector, mid-bandgap donor/acceptor levels caused by defects play a role in trapping holes and thus enhance the photoconductive gain [103,158].…”

Section: Recent Advancesmentioning

confidence: 99%

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Liu¹,

Tang²

2023

J. Phys. D: Appl. Phys.

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Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in lots of solid-state DUV optoelectronics, whose prosperity is pinned hope on continuous innovations on semiconductor materials and physics of device structures. Conquering the technological obstacles in narrow bandgap silicon-based optoelectronics (photodetectors and photonics), wide bandgap semiconductor gained a high level of enthusiasm in constructing DUV photodetector, thereinto Ga2O3 is a typical representative benefiting from its promising physical and chemical properties in nature, especially for its energy bandgap around 4.5-5.2 eV for its five phases (α, β, γ, ε and δ). Which just right provides a hard-won opportunity to respond to DUV light irradiation without the need for adjusting the component in compounds and/or adding external optical instruments, as some compound semiconductors AlxGa1-xN, MgxZn1-xO, etc. According to literature reports on Ga2O3-based photodetectors, the device morphology includes metal-semiconductor-metal (MSM) photodetector, homojunction or heterojunction photodetector, phototransistor, and Schottky photodiode. What calls for special attention is that Schottky photodiode with a rectified Schottky junction has certain advantages: easy fabrication, fast photoresponse, less high-temperature diffusion, low dark current, high detectivity, and self-powered operation; in spite of weaknesses of thin depletion layer and low barrier at metal-semiconductor (M-S) interface. Therefore, in this concise literature review article, the recent progresses on Ga2O3-based Schottky photodiodes is discussed in order to show some suggestions on choice of Schottky metal, interfacial barrier modulation, space electric field adjustment, energy band engineering, and photodetection performance improvement, for promoting the further developments of DUV photodetection in the near future.

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Section: Recent Advancesmentioning

confidence: 99%

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Liu¹,

Tang²

2023

J. Phys. D: Appl. Phys.

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“…Optoelectronic detection strategies that obtain information via the uniqueness of the absorption spectrum of liquids have shown great promise because of their fast response, high accuracy, and excellent stability. [20][21][22][23][24] However, many of the optoelectronic probes have limitations due to complex fabrication steps, the requirement of essential light emitters, and energy consumption. 25,26 Therefore, developing non-invasive liquid probes with self-powered capabilities under ambient light conditions puts forward urgent requirements.…”

Section: Introductionmentioning

confidence: 99%

A shadow enabled non-invasive probe for multi-feature intelligent liquid surveillance system

Lian,

Zhang,

et al. 2024

Nanoscale

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Covalent Organic Frameworks: Linkage Chemistry and Its Critical Role in The Evolution of π Electronic Structures and Functions

He,

Tao,

Liu

et al. 2024

Angewandte Chemie

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Covalent organic frameworks (COFs) provide a molecular platform for designing a novel class of functional materials with well‐defined structures. A crucial structural parameter is the linkage, which dictates how knot and linker units are connected to form two‐dimensional polymers and layer frameworks, shaping ordered π‐array and porous architectures. However, the roles of linkage in the development of ordered π electronic structures and functions remain fundamental yet unresolved issues. Here we report the designed synthesis of COFs featuring four representative linkages: hydrazone, imine, azine, and C=C bonds, to elucidate their impacts on the evolution of π electronic structures and functions. Our observations revealed that the hydrazone linkage provides a non‐conjugated connection, while imine and azine allow partial π conjugation, and the C=C bond permits full π‐conjugation. Importantly, the linkage profoundly influences the control of π electronic structures and functions, unraveling its pivotal role in determining key electronic properties such as bandgap, frontier energy levels, light absorption, luminescence, carrier density and mobility, and magnetic permeability. These findings highlight the significance of linkage chemistry in COFs and offer a general and transformative guidance for designing framework materials to achieve electronic functions.

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The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application

Cited by 20 publications

References 204 publications

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

A shadow enabled non-invasive probe for multi-feature intelligent liquid surveillance system

Covalent Organic Frameworks: Linkage Chemistry and Its Critical Role in The Evolution of π Electronic Structures and Functions

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The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application

Cited by 20 publications

References 204 publications

A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

A shadow enabled non-invasive probe for multi-feature intelligent liquid surveillance system

Covalent Organic Frameworks: Linkage Chemistry and Its Critical Role in The Evolution of π Electronic Structures and Functions

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Product

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A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes