GaAs, GaP, and GaAs1−xPx films deposited by molecular beam epitaxy

Naganuma, M.; Takahashi, Kazuyuki

doi:10.1002/pssa.2210310121

Cited by 21 publications

(4 citation statements)

References 15 publications

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“…Molecular beam epitaxy (MBE) has proven to be a useful tool to grow epifilms with atomically flat surfaces and abrupt interfaces. While nearly perfect homoepitaxial growth was demonstrated by MBE, heteroepitaxial growth is challenged by dissimilar chemical bonding, surface dangling bonds, surface states, and surface symmetry mismatch. In addition, lattice mismatch, polar‐on‐non‐polar epitaxy, and thermal expansion mismatch add complexity to the direct heteroepitaxial growth of GaAs/Si.…”

Section: Introductionmentioning

confidence: 99%

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Alaskar

Arafin

Wickramaratne

et al. 2014

Adv Funct Materials

121

125

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Van der Waals growth of GaAs on silicon using a two‐dimensional layered material, graphene, as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer layer is presented. Two‐dimensional growth of GaAs thin films on graphene is a potential route towards heteroepitaxial integration of GaAs on silicon in the developing field of silicon photonics. Hetero‐layered GaAs is deposited by molecular beam epitaxy on graphene/silicon at growth temperatures ranging from 350 °C to 600 °C under a constant arsenic flux. Samples are characterized by plan‐view scanning electron microscopy, atomic force microscopy, Raman microscopy, and X‐ray diffraction. The low energy of the graphene surface and the GaAs/graphene interface is overcome through an optimized growth technique to obtain an atomically smooth low temperature GaAs nucleation layer. However, the low adsorption and migration energies of gallium and arsenic atoms on graphene result in cluster‐growth mode during crystallization of GaAs films at an elevated temperature. In this paper, we present the first example of an ultrasmooth morphology for GaAs films with a strong (111) oriented fiber‐texture on graphene/silicon using quasi van der Waals epitaxy, making it a remarkable step towards an eventual demonstration of the epitaxial growth of GaAs by this approach for heterogeneous integration.

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Section: Introductionmentioning

confidence: 99%

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Alaskar

Arafin

Wickramaratne

et al. 2014

Adv Funct Materials

121

125

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“…В работах [3,4,12] было показано, что составом твердого раствора GaP x As 1−x можно эффективно управлять, варьируя J As 2 при прочих неизменных условиях…”

Section: аппроксимационный анализ экспериментальных зависимостей R S ...unclassified

“…При МЛЭ твердых растворов (A III )P x As 1−x состав в катионной подрешетке эпитаксиального слоя однозначно задает-ся плотностями потоков атомов элементов III группы. Состав же в подрешетке V группы сложным образом зависит от температуры подложки (T s ), величины и соотношения потоков молекул элементов V и атомов III групп (J V и J III ), состава и состояния поверхности твердого раствора в процессе эпитаксии, молекулярной формы элементов V группы в потоке; кристаллографической ориентации поверхности подложки [3][4][5][6][7]. При разработке технологии выращивания гетероструктур, содержащих слои твердых растворов (A III )P x As 1−x , возникает задача по подбору значений плотностей потоков молекул мышьяка и фосфора, обеспечивающих заданное значение x в выбранных условиях эпитаксии.…”

Section: Introductionunclassified

Молекулярно-лучевая эпитаксия твердого раствора GaP-=SUB=-x-=/SUB=-As-=SUB=-1-x-=/SUB=-: феноменологическое описание зависимости x от условий роста на подложке GaAs(001)

Путято¹,

Емельянов²,

Петрушков³

et al. 2023

Физика И Техника Полупроводников

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The experimental dependences of the GaPx As1−x solid solution phosphorus proportion on growth conditions by molecular beam epitaxy from As2 and P2 molecules on GaAs(001) substrate were described using the phenomenological model. The model was built on the well-established ideas about the III−V compounds MBE growth. The ratio of the arsenic and phosphorus atoms incorporation coefficients was considered as a function of the substrate temperature and molecular flux densitys. Empirical expressions were found that describe the behavior of the arsenic and phosphorus incorporation coefficients ratio depending on the indicated growth parameters. This makes it possible to estimate the V group molecule flux values to obtain the required x in a GaPx As1−x solid solution at the given substrate temperature and the gallium atoms flow density.

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“…Molecular beam epitaxy (MBE) is now an established technique for growing epitaxial semiconductor layers. MBE has been applied to GaAs (1-7), A1GaAs (1,2), GaP (8), GaAsP (8), InP (9)(10)(11), and to the II-VI semiconducting compounds (12). The significant characteristics of MBE are: (i) kinetic (as opposed to equilibrium) growth conditions, (ii) relatively slow growth rates (a few monolayers per second), and (iii) simplicity of flux control (e.g., by opening and closing shutters in front of the beam sources).…”

mentioning

confidence: 99%

Molecular Beam Epitaxial Growth of InP

McFee¹,

Miller²,

Bachmann³

1977

J. Electrochem. Soc.

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Epitaxial layers of normalInP have been grown on the (1̅1overbar;1overbar;) face (P face) of normalInP substrates by molecular beam epitaxy. The layers were grown at substrate temperatures ranging from 220° to 510°C, using separate In and P sources. Unintentionally doped layers grown above ∼350°C appear to be single crystal with n=2–5×1016 cm−3 and μ=2000–3500 cm2/normalVsec . Layers grown at substrate temperatures below ∼350°C appear to be composed of well‐oriented crystallites, and have poor electrical and photoluminescent properties. Orientation‐dependent faceting is a prominent feature of layers grown on (1̅1̅1̅) substrates at temperatures >350°C. Epitaxial normalInP layers have also been grown on the (111) face (In face) and the (100) face of normalInP substrates. Orientation‐dependent faceting is much less prominent for growth on the (100) face, and it is possible to obtain smooth, featureless (100) epitaxial layers.

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GaAs, GaP, and GaAs1−xPx films deposited by molecular beam epitaxy

Cited by 21 publications

References 15 publications

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Towards van der Waals Epitaxial Growth of GaAs on Si using a Graphene Buffer Layer

Молекулярно-лучевая эпитаксия твердого раствора GaP-=SUB=-x-=/SUB=-As-=SUB=-1-x-=/SUB=-: феноменологическое описание зависимости x от условий роста на подложке GaAs(001)

Molecular Beam Epitaxial Growth of InP

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