GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs

Rekaya, S.; Bouzaı̈ene, L.; Sfaxi, L.; Maâref, H.

doi:10.1007/s00339-004-3018-y

Cited by 4 publications

(4 citation statements)

References 30 publications

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“…on substrates having As-terminated (111) crystal orientation (Rekaya et al, 2005). Two sets of samples were grown in a Varian GEN-II-MBE machine at a substrate temperature of 803 K. Prior to the growth, the substrate was spin coated with HSQ diluted with methyl isobutyl ketone; there followed an annealing step at 573 K to convert the HSQ into SiO x .…”

Section: Mbe Growthmentioning

confidence: 99%

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Davydok¹,

Rieger²,

Biermanns³

et al. 2013

J Appl Cryst

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Vertically aligned InAs nanowires (NWs) doped with Si were grown self-assisted by molecular beam epitaxy on GaAs[111]B substrates covered with a thin SiO x layer. Using out-of-plane X-ray diffraction, the influence of Si supply on the growth process and nanostructure formation was studied. It was found that the number of parasitic crystallites grown between the NWs increases with increasing Si flux. In addition, the formation of a Ga 0.2 In 0.8 As alloy was observed if the growth was performed on samples covered by a defective oxide layer. This alloy formation is observed within the crystallites and not within the nanowires. The Ga concentration is determined from the lattice mismatch of the crystallites relative to the InAs nanowires. No alloy formation is found for samples with faultless oxide layers.

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Section: Mbe Growthmentioning

confidence: 99%

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Davydok¹,

Rieger²,

Biermanns³

et al. 2013

J Appl Cryst

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“…14) In recent years, attempts have been made to grow MODFET structures that exhibit interesting device properties. [10][11][12][15][16][17][18] Daoudi et al have analyzed the effects of Si-delta doping and spacer thickness on the electronic properties of an AlGaAs=GaAs HEMT structure by considering normal barrier doping. 10) Yu et al have examined the high-power and high-breakdown device characteristics of delta-doped In 0.35 Al 0.65 As=In 0.35 Ga 0.65 As metamorphic HEMTs grown by molecular beam epitaxy.…”

Section: Introductionmentioning

confidence: 99%

“…Rekaya et al considered both normal and inverted doped pseudomorphic HEMT structures to study the effect of the orientation of the growth direction on electron density. 18) Although attempts have been made to study the electron transport by considering either normal doping or inverted doping, the effect of asymmetry in doping concentrations in both the side barriers on electron transport has not been analyzed. Furthermore, in most works, μ has been calculated by considering the lowest subband occupancy.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, in most works, μ has been calculated by considering the lowest subband occupancy. 10,[18][19][20] However, in a system in which more than one subband is occupied, the inter-subband effects play a vital role in determining μ. [21][22][23][24][25][26][27] In this work, we study the effect of asymmetric doping profiles on low-temperature electron mobility in MODFET structures based on GaAs=AlGaAs quantum wells.…”

Section: Introductionmentioning

confidence: 99%

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Improved two-dimensional electron mobility in asymmetric barrier delta-doped GaAs/AlGaAs modulation-doped field-effect transistor structures

Das

Mohapatra

Nayak

et al. 2017

Jpn. J. Appl. Phys.

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We study the enhancement of electron mobility μ in barrier delta-doped GaAs/AlGaAs quantum-well-based modulation-doped field-effect transistor (MODFET) structures. We asymmetrically vary the doping concentrations Nd1 and Nd2 in the barriers on the substrate and surface sides, respectively, to obtain a nonlinear enhancement of μ as a function of the well width w through multi-subband effects. We show that an increase in doping concentration increases the surface electron density Ns, which in turn enhances μ. Interchanging Nd1 and Nd2 leads to no change in Ns but rather, an enhancement of μ as a function of w for Nd2 > Nd1 owing to asymmetric variation of subband wave functions, thereby implying a higher channel conductivity in a surface-doped structure than in an inverted doped structure. By keeping (Nd1 + Nd2) unchanged, the conductivity of a single-channel MODFET, Nd1 (Nd2) ≠ 0 and Nd2 (Nd1) = 0, can be enhanced by considering a MODFET based on an asymmetrically doped (Nd1 ≠ Nd2 ≠ 0) quantum well structure. We show that the highest Ns and μ product for these structures occurs almost before the onset of the occupation of the second subband. Our analysis of the effect of asymmetric doping profiles on channel conductivity can be utilized for the performance improvement of MODFET-like devices.

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Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

Rekaya¹,

Sfaxi²,

Bouzaı̈ene³

et al. 2008

Materials Science and Engineering: C

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GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs

Cited by 4 publications

References 30 publications

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B

Improved two-dimensional electron mobility in asymmetric barrier delta-doped GaAs/AlGaAs modulation-doped field-effect transistor structures

Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

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