Enhancement of the 2DEG density in AlGaAs/InGaAs/GaAs P-HEMTs structures grown by MBE on (311)A and (111)A GaAs substrates

Photoreflectance study of InAs ultrathin layer embedded in Si-delta-doped GaAs/AlGaAs quantum wells

“…Silicon is widely used as the n-type dopant in GaAs growth using MBE. When silicon (Si) donors are localized into an atomic plane during epitaxial growth, a sheet of ionized donors produces a potential well that confines the electron motion along the direction perpendicular to a delta-doped plane and leads to the formation of a two-dimensional electron gas (2DEG) [1][2][3][4][5].…”

Fermi edge singularity evidence from photoluminescence spectroscopy of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs grown on (311)A GaAs substrates

“…However, heterojunctions grown on high index GaAs substrates ((N 1 1) planes with N Z1) of GaAs substrates have shown optical and transport properties that are better than those obtained in samples grown on (1 0 0) surfaces [24][25][26][27]. Mobility enhancement in the two-dimensional hole gas was also observed in GaAs/AlGaAs heterostructures grown on (3 1 1)A surfaces using silicon as an acceptor [28].…”