1997
DOI: 10.1063/1.118515
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Ga segregation in DyBa2Cu3O7−δ/PrBa2Cu3−xGaxO7−δ/DyBa2Cu3O7−δ ramp-type Josephson junctions

Abstract: Ramp-type Josephson junctions with highly doped PrBa2Cu3−xGaxO7−δ barrier layers (x=0.7, 1.0) have been investigated by high-resolution electron microscopy. A Ga-rich intergrowth and Ga diffusion in the ion-milled SrTiO3 substrate are observed. The Ga segregation is responsible for the deviating electrical behavior as expected from extrapolation of low doping levels (x=0.1–0.4). The Ga diffusion in the ion-milled substrate, and possibly in the base electrode, may hamper Josephson junction fabrication using sub… Show more

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Cited by 14 publications
(1 citation statement)
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“…I C R N has been found to scale nearly linearly with L, ranging from 0.8 to 5 mV. Ga-doped junctions appear to be less sensitive to variations of the barrier thickness [259], but problems of diffusion of Ga and formation of a Ga-containing intergrowth in the barrier layer have been demonstrated through TEM analyses [260]. A coherence length of 21 ± 4 nm has been extracted from measurements of the Josephson properties as a function of the barrier thickness for junctions with Y 0.3 Pr 0.7 barriers in the edge geometry [252].…”
Section: Barrier Using Perosvkite and Layered Materialsmentioning
confidence: 99%
“…I C R N has been found to scale nearly linearly with L, ranging from 0.8 to 5 mV. Ga-doped junctions appear to be less sensitive to variations of the barrier thickness [259], but problems of diffusion of Ga and formation of a Ga-containing intergrowth in the barrier layer have been demonstrated through TEM analyses [260]. A coherence length of 21 ± 4 nm has been extracted from measurements of the Josephson properties as a function of the barrier thickness for junctions with Y 0.3 Pr 0.7 barriers in the edge geometry [252].…”
Section: Barrier Using Perosvkite and Layered Materialsmentioning
confidence: 99%