Ga/GaSb nanostructures: Solution-phase growth for high-performance infrared photodetection

Solution-Processed SnSe/MoSe2 Hybrid Nanostructures for High-Performance Infrared Photodetection

“…Typically, R and D* represent the response capability of the photodetector to the light signal and the minimum light signal detection capability, respectively. 31 In detail, R and D* are defined as R = ΔI/(PA) and D* = RA 1/2 / (2eI d ) 1/2 , 41−43 where A is the effective photodetector area, e is the elemental charge, and I d is the dark current of the photodetector. According to the above definitions, the variation of R and D* with light intensity under zero-bias voltage is shown in Figure 5a, using 1064 nm light illumination.…”

“…5,7,23,24 Using an ESCALAB 250 spectrometer (Perkin-Elmer) with a Kratos Analytical spectrometer and a monochromatic Al Kα (1486.6 eV) as the excitation source, X-ray photoelectron spectroscopy (XPS) was applied. 5,7,31 Ultraviolet, visible, near-infrared (UV−vis−NIR) absorption spectroscopy was conducted on a SOLID3700.…”

“…Using conductive silver paste as a bottom electrode, the back of the Si substrate was connected to a Cu foil. 23,24,31 The SnSe/MoSe 2 hybrid nanosheet/Si photodetector was set up, and the photoresponse properties of the device were detected via a semiconductor parameter analyzer system (Keithley 2410-SCS). 31 For detection, the monochromatic laser diodes (LDs) with fixed wavelengths (520, 650, 780, 808, 980, and 1064 nm) were used as the illumination sources.…”

“…23,24,31 The SnSe/MoSe 2 hybrid nanosheet/Si photodetector was set up, and the photoresponse properties of the device were detected via a semiconductor parameter analyzer system (Keithley 2410-SCS). 31 For detection, the monochromatic laser diodes (LDs) with fixed wavelengths (520, 650, 780, 808, 980, and 1064 nm) were used as the illumination sources. An optical power meter (Thorlabs PM100D) was used to calibrate the light intensities.…”

“…The synthetic route to the SnSe/MoSe 2 hybrid nanosheets is analogous to the synthetic system of the MoSe 2 –NiSe vertical heteronanostructures and MoSe 2 /Bi 2 Se 3 hexagonal nanosheets with slight modification. , As illustrated in Scheme , under stirring, 10 mL of OAm was added into a 100 mL three-necked flask in the route for the fabrication of the SnSe/MoSe 2 hybrid nanosheets. To remove the possible content of water and low-boiling impurities if present, the reaction temperature of the flask was increased to 110 °C in an inert atmosphere of high-purity argon for 40 min. Subsequently, for reactions, the temperature was raised to ∼280–320 °C.…”