$g_{m}/I_{\rm d}$ Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs With Nonlinear Behavior Above Threshold

Accumulation-mode gate-all-around si nanowire nMOSFETs with sub-5nm cross-section and high uniaxial tensile strain

“…8. The threshold voltage for each case was extracted from the simulation data using the derivative of g m /I D method [12], minimizing the effect of gate-voltage dependent mobility and series-resistance. Quantum confinement was found to upshift the threshold voltage by 45 mV, a similar trend to the inversion-mode devices due to the higher quantized subband energies [13,14], and degrade the drain current, as shown in Fig.…”

“…13, the TC peak is located almost at the expected (theoretical) threshold voltage from the linear part of the transfer characteristic. It is worth mentioning that the derivative of g m /I D method to extract the threshold voltage [12], used in Section 5.2 for the simulation data could not provide consistent results using the measurement data. Fig.…”

“…the transfer characteristic of our deeply scaled Si nanowire MOSFETs is almost beyond the accuracy of the extraction methods and the V FB value simply should be approximated using the TCAD simulations at various temperatures. It is also worth mentioning that the both mentioned V FB extraction methods seem to be pretty sensitive to the series resistance for the multi-gate scaled devices (see [26,12]) and several efforts should be addressed to the extraction methods for such multi-gate scaled devices.…”

An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors

“…To do so, we will take advantage of the essentially non-oscillatory nature of the corresponding polynomial WENO interpolation to extract the MOSFET transistor threshold voltage (V T ), which is known to be a key magnitude from the modeling viewpoint [6]. There are many different numerical techniques to determine the threshold voltage [11,7] although we will focus in one of the most currently chosen in industry: the Transconductance Change Method (TCM) or Second Derivative Method (SDM) [3,11,12,5,14]. In the TCM method, the threshold voltage is related to the determination of the gate voltage at which the transistor low drain voltage derivative of the transconductance is maximum (the transconductance is obtained as the drain current derivative with respect to the gate voltage).…”

Tailoring strain in microelectronic devices

“…Equivalently, the minimum indicates the end at V 5 . Similar methods have been proposed to obtain the threshold voltage (V T ) at V 5 [30] or to characterize the hump . .…”