Future perspective and scaling down roadmap for RF CMOS

Morifuji, E.; Momose, H.S.; Ohguro, T.; Yoshitomi, T.; Kimijima, H.; Matsuoka, F.; Kinugawa, M.; Katsumata, Y.; Iwai, Hiroshi

doi:10.1109/vlsit.1999.799394

Cited by 66 publications

(30 citation statements)

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“…In addition, it may also be emphasized that the proposed Schmitt trigger is based on CMOS CIDITA where MOS transistors are scaled to 90 nm. Because a scaled metal-oxide-semiconductor field-effect transistor (MOSFET) has greater unity gain frequency as compared with bipolar junction transistor [21,22], the proposed Schmitt trigger offers very high operating frequency range.…”

Section: Effects Of Frequency Limitationsmentioning

confidence: 99%

A fully electronically controllable Schmitt trigger and duty cycle‐modulated waveform generator

Kumar

Chaturvedi

Maheshwari

2017

Circuit Theory & Apps

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The paper introduces a new Schmitt trigger consisting of only one multiple-output current inverting differential input transconductance amplifier with no passive element. The proposed circuit is simple and usable up to 100 MHz with the advantage of electronically controlled threshold levels and amplitude of the output. The circuit is also little sensitive to temperature and benefits from low power dissipation (0.5 mW). The amplitude of the output current is tunable electronically from 5 nA to 500 μA, which is a wide tunable range. The effects of transistors mismatch on proposed Schmitt trigger have also been explored. The utility of the proposed circuit is further justified through its application as a triangular/square wave generator, with a maximum frequency of 75 MHz. Duty cycle modulation through electronic means is also shown for the generator circuit, where duty cycle results for 80, 20, and 95% have been included, by varying external control current. The cadence VIRTUOSO simulation results by using generic process design kit 90-nm technology are shown to confirm the proposed theory. The proposed circuits are also verified through experimental results by using commercial integrated circuits: AD844 and LM13700. All the simulated and experimental results promise potential applications of the proposed circuits in instrumentation and communication systems. Figure 9. Monte Carlo sampling results showing the transient responses of V in , V z , and I out at 5 MHz for 150 runs when instance of mismatch is defined for (a) transistors M 5 and M 6 , (b) transistors M 20 and M 21 , and (c) transistors M 5 , M 6 , M 20 , and M 21 . [Colour figure can be viewed at wileyonlinelibrary.com] 2168 A. KUMAR, B. CHATURVEDI AND S. MAHESHWARI Figure 23. Experimentally observed square and triangular waveforms for (a) 80% duty cycle (b) 20% duty cycle (c) 95% duty cycle. [Colour figure can be viewed at wileyonlinelibrary.com] 2178A. KUMAR, B. CHATURVEDI AND S. MAHESHWARI Dostal T. Simply adjustable triangular and square wave generator employing controlled gain current and differential voltage amplifier. In 23th Conference Radioelektronika 2013; 109-114. 33. Chien HC. A current-/voltage-controlled four-slope operation square-/triangular-wave generator and a dual-mode pulse width modulation signal generator employing current-feedback operational amplifiers. Microelectronics Journal 2014; 45(6):634-647. 34. Chaturvedi B, Maheshwari S. Third-order quadrature oscillator circuit with current and voltage outputs.

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Section: Effects Of Frequency Limitationsmentioning

confidence: 99%

A fully electronically controllable Schmitt trigger and duty cycle‐modulated waveform generator

Kumar

Chaturvedi

Maheshwari

2017

Circuit Theory & Apps

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“…Generally, long‐channel transistors cannot provide enough gain at high frequency limited by their cutoff and maximum oscillation frequencies. For example, in 0.18 μm CMOS process, the cutoff and maximum oscillation frequencies are 50 and 42 GHz, respectively . That means a VCO fabricated by this process cannot output a high‐quality oscillation signal over 42 GHz because the transistors cannot provide enough gain.…”

Section: Introductionmentioning

confidence: 99%

“…For example, in 0.18 lm CMOS process, the cutoff and maximum oscillation frequencies are 50 and 42 GHz, respectively. 5 That means a VCO fabricated by this process cannot output a high-quality oscillation signal over 42 GHz because the transistors cannot provide enough gain. In order to overcome the above drawback, push-push VCOs have been developed.…”

Section: Introductionmentioning

confidence: 99%

A compact low‐power millimeter wave voltage‐controlled oscillator by using frequency doubling technique

Hsieh

2017

Micro & Optical Tech Letters

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“…The continuous scaling down in CMOS technology has resulted in a dramatic improvement in radio-frequency (RF) performance of multi-finger MOS transistors [1,2]. Both high cut-off frequency (f T ) and high maximumoscillation frequency (f max ) characteristics have been realized in RF circuit designs [3].…”

Section: Introductionmentioning

confidence: 99%

Decrease of Parasitic Capacitance for Improvement of RF Performance of Multi-finger MOSFETs in 90-nm CMOS Technology

Jang¹,

Kwon²,

Shin³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-In this paper, the RF characteristics of multi-finger MOSFETs were improved by decreasing the parasitic capacitance in spite of increased gate resistance in a 90-nm CMOS technology. Two types of device structures were designed to compare the parasitic capacitance in the gate-to-source (C gs ) and gate-to-drain (C gd ) configurations. The radio frequency (RF) performance of multi-finger MOSFETs, such as cut-off frequency (f T ) and maximum-oscillation frequency (f max ) improved by approximately 10% by reducing the parasitic capacitance about 8.2% while maintaining the DC performance.

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Future perspective and scaling down roadmap for RF CMOS

Abstract: Ahstract temu of ff, fom, RF noise. linearity, ad matching c-t i cs, bssed on the sinulation and expetinen&. It has teen fouid that gaIe width and perafions.Conceptoffublre~ing-downforRFCMOShasbeeninvestigatedh finger length me the h y pmleters especiaUy in sub1Wnm gate length

Cited by 66 publications

References 0 publications

A fully electronically controllable Schmitt trigger and duty cycle‐modulated waveform generator

A fully electronically controllable Schmitt trigger and duty cycle‐modulated waveform generator

A compact low‐power millimeter wave voltage‐controlled oscillator by using frequency doubling technique

Decrease of Parasitic Capacitance for Improvement of RF Performance of Multi-finger MOSFETs in 90-nm CMOS Technology

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