Future directions for GaN in 5G and satellite communications

Yuk, Kelvin; Branner, G.R.; Cui, Can

doi:10.1109/mwscas.2017.8053045

Cited by 44 publications

(25 citation statements)

References 6 publications

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“…F ROM controlling eco-friendly automotive systems [1], [2], [3], to enabling next-generation communications [4], to powering more compact and affordable consumer products [5], major technological shifts place increasingly stringent demands on power and RF electronics. Gallium Nitride (GaN) is on the forefront of realizing these new applications, given that its large bandgap enables high-power operation, and its built-in polarization can induce dense, undoped, high-mobility electron sheets to provide low on-resistance.…”

Section: Introductionmentioning

confidence: 99%

Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Bader

Chaudhuri

Nomoto

et al. 2018

IEEE Electron Device Lett.

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High-performance p-channel transistors are crucial to implementing efficient complementary circuits in widebandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN widebandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for nextgeneration compact high-power devices.

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Section: Introductionmentioning

confidence: 99%

Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Bader

Chaudhuri

Nomoto

et al. 2018

IEEE Electron Device Lett.

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“…Moreover, the maturation of GaN technology and its commercial adoption gives way to striking advancement in the space industry. The advantages which make GaN the main candidate for space include reliability, radiation hardness and high-temperature operation, in addition to the generic advantages of high added efficiency, high power density and high operational frequency [25,26]. The latter three, which also improves the overall efficiency in the RF chain makes GaN technology very suitable for the 5G base station design where MIMO and mmWave technologies will be operational.…”

Section: Gan Technologymentioning

confidence: 99%

“…GaN technology's offer of a lightweight compact form factor is undeniable and also offers the possibility for achieving small form-factor nano and micro-satellites where the physical size, mass, power consumption and cost pose serious restrictions. It is expected that the development of the GaN technology will continue to be by the high power RF properties [26]. The potential to achieve the whole receive front-end of the satellite with GaN technology will further create the advantage of a lower cost and improved integration [24].…”

Section: Gan Technologymentioning

confidence: 99%

Role of satellite communications in 5G ecosystem: perspectives and challenges

Onireti

Imran

2018

Satellite Communications in the 5G Era

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The next generation of mobile radio communication systems-so-called 5G-will provide some major changes to those generations to date. The ability to cope with huge increases in data traffic at reduced latencies and improved quality of user experience together with a major reduction in energy usage are big challenges. In addition, future systems will need to embody connections to billions of objects-the so-called Internet of Things (IoT) which raise new challenges. Visions of 5G are now available from regions across the world and research is ongoing towards new standards. The consensus is a flatter architecture that adds a dense network of small cells operating in the millimetre wave bands and which are adaptable and software controlled. But what is the place for satellites in such a vision? The chapter examines several potential roles for satellites in 5G including coverage extension, IoT, providing resilience, content caching and multicast, and the integrated architecture. Furthermore, the recent advances in satellite communications together with the challenges associated with the use of satellite in the integrated satellite-terrestrial architecture are also discussed.

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“…In the past several decades, Gallium nitride (GaN) has played an important role in semiconductor technology due to its wide bandgap, high-temperature resistance, and high voltage resistance [1][2][3]. Therefore, GaN is a favorite selection for microelectronic devices, 5G networks devices, light-emitting diodes (LEDs), laser diodes, and radiofrequency devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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Our aim with this study was a new insight into the sub-nanoscale of polishing and provides the atomic view of the material removal and wear mechanisms by carrying out molecule dynamics simulation. We proposed and analyzed a model with a diamond abrasive particle that sliding or rolling on the surface of GaN workpieces. The authors investigated, step by step, the effects of polishing depths, speeds, abrasive sizes, and crystalline orientations on the wear mechanisms and material removal. The wear mechanisms of the sliding motion were adhering, ploughing, and cutting, depending on the depths. While the wear mechanisms of rolling motion are adhering and ploughing. Notably, in both stages of sliding and rolling, there is an existence of a critical point at 5.0 Å depth when we considered the deformation behaviors. Below that critical point, the GaN workpiece will present an elastic deformation. From the aforementioned point, the workpiece would be plastically deformed. Besides, from 10 Å depth, the dislocation began to appear and evolute simultaneously with the development of the maximum shear stress. The sliding motion on the Ga-face could remove a greater number of atoms than that of the N-face. Moreover, direction [1-100] on Ga-face requesting more forces to polish than direction [11-20]. In conclusion, the main achievements that contribute to the field can be summarized as follows: the atomistic wear mechanisms of sliding and rolling motions, material removal, and the role of rolling motion at the sub-nanoscale during the ultrafine flat polishing process.

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Future directions for GaN in 5G and satellite communications

Cited by 44 publications

References 6 publications

Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Role of satellite communications in 5G ecosystem: perspectives and challenges

Atomistic wear mechanisms and deformation evolution in polishing

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