Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Bader, Samuel James; Chaudhuri, Reet; Nomoto, Kazuki; Hickman, Austin; Chen, Zhen; Then, Han Wui; Muller, David A.; Xing, Huili Grace; Jena, Debdeep

doi:10.1109/led.2018.2874190

Cited by 69 publications

(28 citation statements)

References 24 publications

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“…AlN also maximizes the barrier bandgap, improving the breakdown voltage. Additionally, the AlN buffer offers a promising platform for p-channel FETs, enabling the possibility for all-nitride CMOS [14]- [16].…”

Section: Introductionmentioning

confidence: 99%

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

Hickman

Chaudhuri

et al. 2021

IEEE J. Electron Devices Soc.

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The AlN/GaN/AlN heterostructure is attractive for microwave and millimeter-wave power devices due to its thin top barrier, tight carrier confinement, and improved breakdown voltage. This work explores the large-signal RF performance of high-electron-mobility transistors on this heterostructure. Results are highlighted by record high on-current of 3.6 A/mm, and record maximum oscillation frequency (fmax) of 233 GHz. The load-pull power sweep at 10 GHz demonstrate a peak power added efficiency (PAE) of 22.7% with an associated gain (GT) of 8.7 dB and output power (Pout) of 3 W/mm. When optimized for power, the peak Pout of 3.3 W/mm has an associated PAE of 14.7% and GT of 3.2 dB. This first demonstration is encouraging for the mm-wave power potential of the AlN/GaN/AlN HEMT.

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Section: Introductionmentioning

confidence: 99%

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

Hickman

Chaudhuri

et al. 2021

IEEE J. Electron Devices Soc.

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“…These applications have continuously increased over the last decade, making nitride materials the second semiconductor market in volume after Si. The p-type doping of nitrides is the key for optical [ 1 ] and electronic [ [2][3][4] devices. Understanding and explaining the properties of point defects in p-type material is crucial for improving the efficiency and longevity of light-emitting and/or power devices based on the GaN [ 5 ].…”

Section: Introductionmentioning

confidence: 99%

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Konczewicz

Juillaguet

Litwin‐Staszewska

et al. 2020

Journal of Applied Physics

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“…Of the varied structures 6,[9][10][11][12][13][14][15][16] which have been proposed as a platform for p-channel III-Nitride electronics, the single GaN/AlN heterojunction field-effect transistor has received recent attention for its high sheet conductance 7 and excellent device performance 8 . In this structure, depicted in Fig 1(a), the all-binary materials provide a straightforwardly repeatable growth with no possible parasitic electron channels, a tremendous holeinducing polarization-charge for low sheet-resistance, and maximal bandgaps for extreme voltage-handling capability.…”

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confidence: 99%

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

Bader

Chaudhuri

Schubert

et al. 2019

Applied Physics Letters

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To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the temperature dependence of its intrinsic mobility. Finally, the effects of strain on the electronic structure of the confined 2D hole gas are examined and a means is proposed to engineer the strain to improve the 2D hole mobility for enhanced p-channel device performance, with the goal of enabling wide-bandgap CMOS.Decades after the celebrated invention of Mg p-doping 1 in Gallium Nitride (GaN) and the subsequent development of GaN-based LEDs, the manipulation of holes in GaN remains a fundamental challenge. Consequently, despite the expected dominance of GaN High Electron Mobility Transistors (HEMTs) in the coming generation of power electronics 2 and communications systems 3 , there is no complementary p-channel device which can be readily integrated. This incompleteness restricts the possible circuit topologies and system designs acheivable in GaN electronics, but arises quite straightforwardly from the physics of the GaN valence band. These bands, both heavy and deep in energy, have proven difficult to contact with typical metal workfunctions 4 , difficult to dope with high efficiency 5 , and difficult to flow current through with high conductivity. Nonetheless, the commercial interest in generating complementary GaNbased circuits 6 and scientific interest in studying highlydegenerate hole physics 7 have prompted great recent progress in p-channel devices 8 .Of the varied structures 6,9-16 which have been proposed as a platform for p-channel III-Nitride electronics, the single GaN/AlN heterojunction field-effect transistor has received recent attention for its high sheet conductance 7 and excellent device performance 8 . In this structure, depicted in Fig 1(a), the all-binary materials provide a straightforwardly repeatable growth with no possible parasitic electron channels, a tremendous holeinducing polarization-charge for low sheet-resistance, and maximal bandgaps for extreme voltage-handling capability. Given the recent reports of temperature-dependent transport studies in this heterostructure 7 , and recent first-principles suggestions of possible enhancements to hole mobility in bulk p-GaN 17 , this work presents a model to explain the measured mobility of the 2D hole a) sjb353@cornell.edu; http://sambader.net 2.5 0.0 2.5 ← k y [1/nm] k x → (b) HH LH 0 2 4 DOS [eV −1 nm −2 ] 150 100 50 0 50 Energy [meV] HH LH (c) 0 5 10 15 20 Depth [nm] E C E V E F p GaN 13nm AlN ↓ 2DHG 0.5 1.0 1.5 2.0 2.5 Effective mass [m e ] HH LH (d) (a) 0 1 f(k x ) f(k y ) FIG. 1. (a) A 13nm GaN layer on top of a thick AlN buffer induces a two-dimensional hole gas of density ∼ 4.4×10 13 /cm 2 , which is confined at the interface by strong p...

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Gate-Recessed E-mode p-Channel HFET With High On-Current Based on GaN/AlN 2D Hole Gas

Cited by 69 publications

References 24 publications

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas

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