Fundamentals of Silicon Integrated Device Technology, Vol. II, Bipolar and Unipolar Transistors

Abstract

not Available.

An analytical model for depletion-region capacitance and widths of diffused p-n junctions

“…As others have noted (Burger andDonovan 1968, Lawrence andWarner 1960) the linear graded approximation or the .step junction approximation can accurately predict the values of the space-charge region capacitance and the total widths of the depletion region over fairly wide voltage ranges. Usually, the linearly graded junction approximation is good at low voltages while the step junction approximation is good for evaluating diffused junction properties at larger reverse biases.…”

Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering

“…Studies of metal-oxide-semiconductor (MOS) structures have provided more information on the electronic and ionic properties of the thermal oxides of silicon than perhaps any other dielectric (Burger and Donovan 1967). Modern processing techniques for the oxidation of silicon provide oxides with reproducible characteristics and with considerably lower impurity levels than, for example, the purest conventional silica.…”

Nonlinear System Analysis in Bipolar Integrated Circuits.

“…Using values for AV and IE3 shown in Figure 3-2, the BN value taken from Figure 3-8 at I C = IE3 , and the value for RSE determined from previous section, Equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19) can be solved for the base bulk resistance RB.…”

“…(6-17) GS 1 a3ID a 3 6 DV's3 (6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18) The following values were obtained 'The parameters used in Eq. (6-19) are described in Table 6-1.…”

“…The AF voltmeter V M reading can be expressed as (7)(8)(9)(10) because the amplitude of the audio frequency signal to which the voltmeter response is (mA 2)H 2 (fl,-f 2 ) as can be seen by examining o. 0.…”