Fundamentals of ion-beam-assisted deposition. II. Absolute calibration of ion and evaporant fluxes

Hubler, G. K.; Vechten, D. Van; Donovan, E. P.; Carosella, C.A.

doi:10.1116/1.576926

Cited by 56 publications

(12 citation statements)

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“…incorporated into the sample) per unit of charge may also be smaller than two (atoms per electronic unit charge), which implies that not only N 2 + molecules arrive at the sample surface, but also N + , N°, N 2°, etc. 21,22 It is noted that the release of nitrogen from the iron nitride surface, which strongly depends on temperature, have been studied by thermal desorption spectroscopy and is not important at 400ºC for iron surfaces. 23 Assuming the sticking probability to be constant during the nitriding process, the sticking probability can be estimated from the ratio of the ion dose and the total nitrogen incorporated in the material.…”

Section: Nitrogen Surface Concentration; the Sticking Probabilitymentioning

confidence: 99%

Microstructure of tool steel after low temperature ion nitriding

Zagonel

Mittemeijer

Alvarez

2009

Materials Science and Technology

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The microstructural development in H13 tool steel upon nitriding by an ion beam process was investigated. The nitriding experiments were performed at a relatively low temperature of about 400 ºC and at constant ion beam energy (400 eV) of different doses in a high-vacuum preparation chamber; the ion source was fed with high purity nitrogen gas. The specimens were characterized by X-ray photoelectron spectroscopy (XPS), electron probe microanalysis (EPMA), scanning and transmission electron microscopy (SEM and TEM), and grazing incidence and Bragg-Brentano X-ray diffractometry. In particular, the influence of the nitrogen surface concentration on the development of the nitrogen concentration-depth profile and the possible precipitation of alloying element nitrides were discussed.

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Section: Nitrogen Surface Concentration; the Sticking Probabilitymentioning

confidence: 99%

Microstructure of tool steel after low temperature ion nitriding

Zagonel

Mittemeijer

Alvarez

2009

Materials Science and Technology

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“…From previous characterization of a similar ion gun [18], the ions were believed to be primarily N~-with a small amount of N ÷, producing an average of 1.89 nitrogen atoms per ion. Using this value for the nitrogen atoms per ion, the arrival ratio of nitrogen to aluminium was kept between 1.1 and 1.3.…”

Section: Methodsmentioning

confidence: 99%

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

Edgar

Carosella

Eddy

et al. 1996

J Mater Sci: Mater Electron

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The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (1 1 1), Si (1 00) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disorder in the AIN films increased as determined by X-ray diffraction, FTIR and Raman spectroscopy. The preferred orientation of the film's c-axis changed from completely normal to the film at 100 V, to a mixture of normal and in the plane of the film at 200V. For AIN films deposited under the same conditions, the films were more highly oriented on sapphire (000 1) than in Si (1 1 1). The hardness of the films increased from 18.2 to 23.7 GPa with the nitrogen-beam voltage, and possible reasons for this change in hardness are considered. IntroductionAluminium nitride a wurtzite structure, wide energy band gap (6.2 eV) semiconductor -has many valuable physical properties for electronic, optoelectronic and acoustoelectronic devices, including high thermal conductivity (theoretically as high as 3.2 W m t K-t [1]), high electrical resistivity [2], high ultrasonic velocity and negative electron affinity [3]. Device applications using these properties remain largely undeveloped due to the difficulty in producing high quality A1N thin films with smooth morphologies over large areas. Two obstacles to improving AlN thin film quality are the high susceptibility of AIN to impurity incorporation (particularly oxygen), and the difficulty of depositing stoichiometric, crystalline A1N at a low substrate temperature. Aluminium nitride thin films have been prepared by many methods, including chemical vapour deposition [4 6], gas-source molecular beam epitaxy [7,8], magnetron sputtering [9, 10], and ion beam assisted deposition (IBAD) [11,12].The present IBAD study of A1N was undertaken to determine how the properties of A1N are affected by the energy of the ion beam (in this case nitrogen) and to examine the capabilities of IBAD in producing electronic grade thin films. This work focuses on the

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“…this area by Liu et al [11][12][13][14][15][16][17][18] who focused especially on the Si-N systems. The preparation by IBAD of Si-N films of controlled composition was also investigated by Hubler et al [19][20][21][22][23][24][25][26][27] In their work, a very simple analytical mathematical model of composed gradient high energy IBAD concentration profile is presented. The model can be used as the first step approximation in the process of constructing a gradient concentration profile.…”

Section: Introductionmentioning

confidence: 98%

Simple Mathematical Models of High Energy Ion Beam Assisted Deposition Concentration Profiles in Binary Thin Films

Cerny

Konvickova²,

Jech³

et al. 2011

J. Nanosci. Nanotech.

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Mathematical models of composed high energy ion beam assisted deposition (IBAD) concentration profiles of implanted component in binary thin films are described. Yields of the backscattered ions and sputtering of the deposited component are considered. A Gaussian probability density is assumed to apply to the ion range distribution. The construction of concentration profiles of various shapes is considered. These profiles should of course be constructed based on continuous changes of the process parameters, but certain technical problems can arise with this continuous parameter changes. Therefore, it has been assumed that the changes to the process parameters are discrete and proceed in several steps. The resulting mathematical models are combinations of error functions. Mathematical models can be used as regression functions for the determination of some parameters, e.g., the sputtering yield. Based on the mathematical model the gradient concentration profile of nitrogen in the SiNx film was experimentally produced by the IBAD method, measured by Rutherford backscattering spectroscopy and compared with the mathematical model.

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Fundamentals of ion-beam-assisted deposition. II. Absolute calibration of ion and evaporant fluxes

Cited by 56 publications

References 0 publications

Microstructure of tool steel after low temperature ion nitriding

Microstructure of tool steel after low temperature ion nitriding

Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition

Simple Mathematical Models of High Energy Ion Beam Assisted Deposition Concentration Profiles in Binary Thin Films

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