Abstract:Mathematical models of composed high energy ion beam assisted deposition (IBAD) concentration profiles of implanted component in binary thin films are described. Yields of the backscattered ions and sputtering of the deposited component are considered. A Gaussian probability density is assumed to apply to the ion range distribution. The construction of concentration profiles of various shapes is considered. These profiles should of course be constructed based on continuous changes of the process parameters, bu… Show more
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