Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)

Fuster, David; González, Y.; González, L.

doi:10.1186/1556-276x-9-309

Cited by 24 publications

(25 citation statements)

References 36 publications

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“…Small holes are visible only on the AlGaAs surface that we attribute to defects caused by contamination of the highly reactive AlGaAs surface during the 1-h growth interruption. These results are in agreement with a very recent study of Fuster et al [ 44 ], which shows that droplet etching with Ga at T =500°C is only possible in the presence of an arsenic flux. Additional experiments [ 42 ] show that hole formation is also suppressed for F As >3×10 −6 Torr and that flat surfaces are formed, instead.…”

Section: Resultssupporting

confidence: 93%

Dynamics of mass transport during nanohole drilling by local droplet etching

et al. 2015

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Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing. This paper studies the droplet material removal experimentally and discusses the results in terms of a simple model. The first set of experiments demonstrates that the droplet material is removed by detachment of atoms and spreading over the substrate surface. Further experiments establish that droplet etching requires a small arsenic background pressure to inhibit re-attachment of the detached atoms. Surfaces processed under completely minimized As pressure show no hole formation but instead a conservation of the initial droplets. Under consideration of these results, a simple kinetic scaling model of the etching process is proposed that quantitatively reproduces experimental data on the hole depth as a function of the process temperature and deposited amount of droplet material. Furthermore, the depth dependence of the hole side-facet angle is analyzed.

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Section: Resultssupporting

confidence: 93%

Dynamics of mass transport during nanohole drilling by local droplet etching

et al. 2015

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“…A second important process is the removal of the liquid material from the initial droplet position. Previous studies indicated already that a small amount of background arsenic is essential for this [ 17 , 18 ]. Without background As, the initial droplets are conserved and no holes are formed.…”

Section: Introductionmentioning

confidence: 99%

Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs

et al. 2016

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Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal. The present work demonstrates that the As background can be supplied by both a small As flux to the surface as well as by the topmost As layer in an As-terminated surface reconstruction acting as a reservoir. We study the temperature-dependent evaporation of the As topmost layer with in situ electron diffraction and determine an activation energy of 2.49 eV. After thermal removal of the As topmost layer droplet etching is studied under well-defined As supply. We observe with decreasing As flux four regimes: planar growth, uniform nanoholes, non-uniform holes, and droplet conservation. The influence of the As supply is discussed quantitatively on the basis of a kinetic rate model.

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“…For example, a variety of quantum structures have been obtained by this technique such as dots, rings, holes, wires, dot pairs, dot disks, which can be fabricated on any sort of substrates. This flexible nanostructure-fabrication technique can apply to a wide range of materials by precisely controlling the lateral diffusion of metallic droplets and crystallization process [ 11 , 12 ]. Besides, many applications have been proposed by droplet epitaxy technique: GaAs/AlGaAs quantum dot laser [ 13 ], single photon emitter on Si [ 14 ], and infrared photodetector with strain-free GaAs quantum dot pairs [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

Chang

Yang

et al. 2014

Nanoscale Res Lett

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In this report, self-organized GaN nanodots have been grown on Si (111) by droplet epitaxy method, and their density can be controlled from 1.1 × 1010 to 1.1 × 1011 cm-2 by various growth parameters, such as substrate temperatures for Ga droplet formation, the pre-nitridation treatment of Si substrate, the nitridation duration for GaN crystallization, and in situ annealing after GaN formation. Based on the characterization of in situ RHEED, we can observe the surface condition of Si and the formation of GaN nanodots on Si. The surface nitridaiton treatment at 600°C provides a-SiNx layer which makes higher density of GaN nanodots. Crystal GaN nanodots can be observed by the HRTEM. The surface composition of GaN nanodots can be analyzed by SPEM and μ-XPS with a synchrotron x-ray source. We can find GaN nanodots form by droplet epitaxy and then in situ annealing make higher-degree nitridation of GaN nanodots.

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Fundamental role of arsenic flux in nanohole formation by Ga droplet etching on GaAs(001)

Cited by 24 publications

References 36 publications

Dynamics of mass transport during nanohole drilling by local droplet etching

Dynamics of mass transport during nanohole drilling by local droplet etching

Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs

Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

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