Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

Yu, Ing-Song; Chang, Chun; Yang, Chung Pei; Lin, Cheng-Kuo; Ron, Yuan; Chen, Chun‐Chi

doi:10.1186/1556-276x-9-682

Cited by 19 publications

(9 citation statements)

References 25 publications

(20 reference statements)

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“…On the other hand, visible planar defects can be caused by polarity inversion at domain boundaries. [12], [13] and according to our studies there is no direct correlation between surface density of the nanoislands of the seeding layer and density of the synthesized GaN nanoparticles. But despite that fact, it has been found that the effective thickness of the seeding layer significantly affects further GaN growth.…”

Section: Structure and Morphology Of Y-shaped Gan Nanoparticles (Gan contrasting

confidence: 53%

Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

Fedorov

Bolshakov

Можаров

et al. 2017

J. Phys.: Conf. Ser.

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Abstract. Silicon and aluminium nitrides, commonly used as buffer layers for GaN growth on Si are wide gap insulators, preventing barrier free charge-carrier transport across the heterojunction and limiting the functionality of GaN-on-silicon technology. In this work we explore possibility of direct growth of GaN on Si nano-heterostructures by PA-MBE with use of Ga-nanodroplets as seeds. It is demonstrated that use of seeding layer can result in formation of Y-shaped planar GaN nanoparticles (GaN tripods) along with commonly observed GaN nanowires. Growth mechanism, morphology and structural characterization of GaN/Si nano-heterostructures is discussed.

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Section: Structure and Morphology Of Y-shaped Gan Nanoparticles (Gan contrasting

confidence: 53%

Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

Fedorov

Bolshakov

Можаров

et al. 2017

J. Phys.: Conf. Ser.

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“…GaN nanodots grown by the method of droplet epitaxy were carried out in our ULVAC MBE system with a radio frequency (RF) nitrogen plasma source [19]. Two inch Si (111) wafers were cleaned using acetone to remove organic impurities and using 10% HF solution to remove the native oxide.…”

Section: Methodsmentioning

confidence: 99%

“…Density of GaN nanodots can be controlled by the growth parameters. Metastable zinc-blende structure can be performed in the GaN nanodots on sapphires by droplet epitaxy [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

2018

Metals

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Gallium nitride (GaN) is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111) by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiN x layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

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“…Among these nitride-based materials, gallium nitride (GaN) nanocrystals (NCs) with a direct wide band gap (3.34 eV) extensively have been studied for the use of next generation devices, such as photovoltaic, solid-state quantum computation, and single-photon sources [4][5][6][7] . To achieve GaN nanostructures on a substrate, various techniques such as self-assembly growth, vapor-liquid-solid (VLS) process using molecular beam epitaxy (MBE), and metal organic chemical vapor deposition (MOCVD) have been widely used so far [8][9][10] . For example, Zhang et al reported the formation of GaN NCs via thermal decomposition by MOCVD 11 .…”

mentioning

confidence: 99%

“…For example, Zhang et al reported the formation of GaN NCs via thermal decomposition by MOCVD 11 . Additionally, GaN nanodots were grown via Ga droplet epitaxy using pretreatment and post-annealing procedure and converted from Ga 2 O 3 using combustion process 10,12,13 . These methods, however, can exhibit the limited introduction of GaN nanostructures into the desirable applications, because of the complicated growth process and low throughput.…”

mentioning

confidence: 99%

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

Lee

Baik

et al. 2020

Sci Rep

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While non-polar nanostructured-GaN crystals are considered as a prospective material for the realization of futuristic opto-electronic application, the formation of non-polar GaN nanocrystals (NCs) with highly efficient visible emission characteristics remain unquestionable up to now. Here, we report the oxygen-incorporated a-plane GaN NCs with highly visible illumination excitonic recombination characteristics. Epitaxially aligned a-plane NCs with average diameter of 100 nm were formed on r-plane sapphire substrates by hydride vapor phase epitaxy (HVPE), accompanied by the oxygen supply during the growth. X-ray photoemission spectroscopy measurements proved that the NCs exhibited Ga-O bonding in the materials, suggesting the formation of oxidized states in the bandgap. It was found that the NCs emitted the visible luminescence wavelength of 400-500 nm and 680-720 nm, which is attributed to the transition from oxygen-induced localized states. Furthermore, time-resolved photoluminescence studies revealed the significant suppression of the quantum confined Stark effect and highly efficient excitonic recombination within GaN NCs. Therefore, we believe that the HVPE nonpolar GaN NCs can guide the simple and efficient way toward the nitride-based next-generation nanophotonic devices.

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Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy

Cited by 19 publications

References 25 publications

Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

Effect of Ga seeding layer on formation of epitaxial Y-shaped GaN nanoparticles on silicon

Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

Highly Efficient Excitonic Recombination of Non-polar ($$11\overline{2}0$$) GaN Nanocrystals for Visible Light Emitter by Hydride Vapour Phase Epitaxy

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