2010
DOI: 10.1117/12.853714
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Fundamental processes governing operation and degradation in state of the art P-OLEDs

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Cited by 13 publications
(29 citation statements)
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“…EL spectra of P-OLEDs were measured using Ocean Optics USB2000+ spectrometer, and J -V -L characteristics were measured using Minolta CS-200 luminance meter and Keithley 2400 SourceMeter. Device EQE was calculated using P-OLED optical model, [ 11 ] where deviation from Lambertian emission pattern was taken into account. Values of EQE at few current densities were additionally checked by measurements in an integration sphere.…”
Section: Methodsmentioning
confidence: 99%
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“…EL spectra of P-OLEDs were measured using Ocean Optics USB2000+ spectrometer, and J -V -L characteristics were measured using Minolta CS-200 luminance meter and Keithley 2400 SourceMeter. Device EQE was calculated using P-OLED optical model, [ 11 ] where deviation from Lambertian emission pattern was taken into account. Values of EQE at few current densities were additionally checked by measurements in an integration sphere.…”
Section: Methodsmentioning
confidence: 99%
“…Details of the model can be found elsewhere. [ 11 ] Emitter alignment was measured by a polarized angular PL technique, similar to that described by Flämmich et al, [ 16 ] giving an average dipole orientation (ratio of parallel vs perpendicularly aligned emitters) of p || : p ⊥ = 2:0.84, indicating a slight alignment beneficial for the outcoupling enhancement compared to an isotropic emitter. Using experimentally measured values of the device EQE (10.0 ± 0.5%) and the delayed EL fraction (73.2 ± 0.7%) observed at V = 3.2 V ( J = 0.008 mA cm −2 ), η PL = 43.6 ± 0.9%, and η PL air = 41 ± 0.8% we fi nd that in order to match Equations ( 2) -( 4) RISC and ISC quantum effi ciencies should be within the range of Φ RISC = 83 ± 7%, and Φ ISC = 8 ± 5%, respectively.…”
Section: Doi: 101002/adma201501090mentioning
confidence: 99%
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“…[5][6][7][8] In the model devices considered in this study, the primary cause of efficiency loss during electrical stressing has been shown to be the buildup to photoluminescence quenching sites in the emissive layer rather than the decay of the charge injecting contacts. 9 Although there have been some recent reports on the contribution that triplet states can make to the efficiency of a fluorescent small molecule OLED, 10,11 there has been little published research on the consequences of high triplet densities on the operational lifetime of the devices. This paper will report on the effect of triplet-triplet annihilation (TTA) on the device lifetime and efficiency of P-OLEDS.…”
Section: Introductionmentioning
confidence: 99%