Fundamental Electrical Characterization of Thin‐Film Solar Cells

Kirchartz, Thomas; Ding, Kaining; Rau, Uwe

doi:10.1002/9783527636280.ch2

Cited by 13 publications

(20 citation statements)

References 45 publications

(32 reference statements)

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“…This strong temperature dependence for samples grown under copper excess can be explained by tunneling enhanced recombination or multi step recombination. 23 These data suggest that the V oc in Cu-rich CIGS is reduced by tunneling enhanced recombination, as already shown in CIS.…”

supporting

confidence: 71%

“…22 The extrapolation of the V oc above 200 K to 0 K yields the activation energy of the main recombination path. 23 For the Cu-poor sample, an activation energy close the bandgap is extracted indicating that the sample is limited by bulk recombination (graph S3 in the supplementary material). For the Cu-rich sample, the extracted value at 0 K is 280 meV below the bandgap which indicates that the sample is limited by interface recombination.…”

mentioning

confidence: 99%

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Quasi Fermi level splitting of Cu-rich and Cu-poor Cu(In,Ga)Se2 absorber layers

Babbe

Choubrac

Siebentritt

2016

Applied Physics Letters

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The quasi Fermi level splitting is measured for Cu(In,Ga)Se2 absorber layers with different copper to (indium + gallium) ratios and for different gallium contents in the range of 20%–40%. For absorbers with a [Cu]/[In + Ga] ratio below one, the measured quasi Fermi level splitting is 120 meV higher compared to absorbers grown under copper excess independent of the gallium content, contrary to the ternary CuInSe2 where the splitting is slightly higher for absorber layers grown under copper excess. Possible explanations are the gallium gradient determined by the secondary ion mass spectrometry measurement which is less pronounced towards the surface for stoichiometric absorber layers or a fundamentally different recombination mechanism in the presence of gallium. Comparing the quasi Fermi level splitting of an absorber to the open circuit voltage of the corresponding solar cell, the difference for copper poor cells is much lower (60 meV) than that for copper rich cells (140 meV). The higher loss in V OC in the case of the Cu-rich material is attributed to tunneling enhanced recombination due to higher band bending within the space charge region.

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supporting

confidence: 71%

mentioning

confidence: 99%

Quasi Fermi level splitting of Cu-rich and Cu-poor Cu(In,Ga)Se2 absorber layers

Babbe

Choubrac

Siebentritt

2016

Applied Physics Letters

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“…As it is our aim to describe in detail the conditions to prepare and precisely to measure high efficiency a-Si:H single junction solar cells, where relevant, we also comment on the material properties of the layers that constitute the solar cell. The solid line represents the air mass (AM) 1.5 G spectrum [29] and the dotted line the measured sun simulator spectrum.…”

Section: Resultsmentioning

confidence: 99%

“…The current density per nanometer wavelength I Ph versus the wavelength in case of a quantum efficiency of unity. The solid line represents the air mass (AM) 1.5 G spectrum and the dotted line the measured sun simulator spectrum.…”

Section: Methodsmentioning

confidence: 99%

“…The measurements and evaluation of the solar cell parameters fill factor ( FF ), J sc , and V oc from their Current density/voltage (JV) characteristics and external quantum efficiency (EQE) measurements were performed with particular emphasis on determining and reducing possible measurement errors for the particular type solar cell geometry used in the present work. The JV characteristics were measured under illumination with a double source sun simulator from Wacom (WXS‐140S‐super, Wacom Electric Co., Ltd., 541 Tanaka, Fukaya‐Shi, Saitama, Japan) at standard test conditions (class A spectrum, 100 mW/cm 2 , 25 °C) .…”

Section: Methodsmentioning

confidence: 99%

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Preparation and measurement of highly efficient a‐Si:H single junction solar cells and the advantages of μc‐SiO_x:H n‐layers

Lambertz

Finger

Schropp

et al. 2015

Progress in Photovoltaics

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Near surface defects: Cause of deficit between internal and external open‐circuit voltage in solar cells

Sood

Urbaniak

Boumenou

et al. 2021

Progress in Photovoltaics

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Interface recombination in a complex multilayered thin‐film solar structure causes a disparity between the internal open‐circuit voltage (VOC,in), measured by photoluminescence, and the external open‐circuit voltage (VOC,ex), that is, a VOC deficit. Aspirations to reach higher VOC,ex values require a comprehensive knowledge of the connection between VOC deficit and interface recombination. Here, a near‐surface defect model is developed for copper indium di‐selenide solar cells grown under Cu‐excess conditions. These cell show the typical signatures of interface recombination: a strong disparity between VOC,in and VOC,ex, and extrapolation of the temperature dependent q·VOC,ex to a value below the bandgap energy. Yet, these cells do not suffer from reduced interface bandgap or from Fermi‐level pinning. The model presented is based on experimental analysis of admittance and deep‐level transient spectroscopy, which show the signature of an acceptor defect. Numerical simulations using the near‐surface defects model show the signatures of interface recombination without the need for a reduced interface bandgap or Fermi‐level pinning. These findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current–voltage measurements to identify the cause of interface recombination in the devices.

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Fundamental Electrical Characterization of Thin‐Film Solar Cells

Abstract: 36j 2 Fundamental Electrical Characterization of Thin-Film Solar Cells p-n-junction R = Bnp.2 Current/Voltage Curves j39 2.2 Current/Voltage Curves j41

Cited by 13 publications

References 45 publications

Quasi Fermi level splitting of Cu-rich and Cu-poor Cu(In,Ga)Se2 absorber layers

Quasi Fermi level splitting of Cu-rich and Cu-poor Cu(In,Ga)Se2 absorber layers

Preparation and measurement of highly efficient a‐Si:H single junction solar cells and the advantages of μc‐SiO_x:H n‐layers

Near surface defects: Cause of deficit between internal and external open‐circuit voltage in solar cells

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Fundamental Electrical Characterization of Thin‐Film Solar Cells

Abstract: 36j 2 Fundamental Electrical Characterization of Thin-Film Solar Cells p-n-junction R = Bnp.2 Current/Voltage Curves j39 2.2 Current/Voltage Curves j41

Cited by 13 publications

References 45 publications

Quasi Fermi level splitting of Cu-rich and Cu-poor Cu(In,Ga)Se2 absorber layers

Quasi Fermi level splitting of Cu-rich and Cu-poor Cu(In,Ga)Se2 absorber layers

Preparation and measurement of highly efficient a‐Si:H single junction solar cells and the advantages of μc‐SiOx:H n‐layers

Near surface defects: Cause of deficit between internal and external open‐circuit voltage in solar cells

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Preparation and measurement of highly efficient a‐Si:H single junction solar cells and the advantages of μc‐SiO_x:H n‐layers