Preparation and measurement of highly efficient a‐Si:H single junction solar cells and the advantages of μc‐SiOx:H n‐layers

Lambertz, Andreas; Finger, F.; Schropp, R.E.I.; Rau, Uwe; Smirnov, Vladimir

doi:10.1002/pip.2629

Cited by 44 publications

(42 citation statements)

References 30 publications

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“…Function n p-μc-SiOx:H p-type layer 2.97-3.5 [5,13] n-μc-SiOx:H n-type layer + IRL 1.8-2.6 [9,10,14,15] SiOx IRL 2.0 [12,16] Table 1 gives a summary of n values reported in the literature for such films. The electrical conductivity of doped μc-SiO x :H is attributed to the presence of doped microcrystalline silicon filaments in an amorphous silicon oxide matrix, which results in an out-of-plane conductivity of the layers above 10 −5 S/cm, while their in-plane conductivities are below 10 −10 S/cm [9].…”

Section: Methodsmentioning

confidence: 99%

Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

et al. 2016

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The use of hexamethyldisiloxane (HMDSO) as an oxygen source for the growth of p-type siliconbased layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon, resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techniques including Spectroscopic Ellipsometry, Dark Conductivity, Fourier Transform Infrared Spectroscopy, Secondary Ion Mass Spectrometry and Transmission Electron Microscopy to check material composition and structure. Materials studies show that the refractive indices of the layers can be tuned over the range from 2.5 to 3.85 (measured at 600 nm) and in-plane dark conductivities over the range from 10 −8 S/cm to 1 S/cm, suggesting that these doped layers are suitable for solar cell applications. The p-type layers were tested in single junction amorphous silicon p-i-n type solar cells.

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Section: Methodsmentioning

confidence: 99%

Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

et al. 2016

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“…Note that these relatively thick films were analyzed instead of the more standard a-Si:H layer thicknesses of ~70-350 nm that are typically used in state-of-the-art TF Si single-junction [32,36,37], tandem [33,37,58], triple-junction [31,38], and quadruple-junction [35,39,59] solar cells. In this way, a clear plateau appears on the positron depth profile in the DB-PAS measurements which enables a more accurate determination of the Doppler S-W values of the film.…”

Section: A Sample Definitionsmentioning

confidence: 99%

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Melskens

Eijt

Schouten

et al. 2017

IEEE J. Photovoltaics

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“…However such a landmark has been achieved in a few other laboratories e.g. reference [18], probably due to better light absorption in their material, improved P/I interface properties in solar cells fabricated with this material, etc.…”

Section: Discussionmentioning

confidence: 99%

“…We find, using the material and deposition parameters of our a-Si:H solar cells, that it is difficult to attain 10% stabilised efficiency with this material, even though other laboratories e.g. [18] have actually developed a-Si:H single junction cells with stabilised efficiencies in excess of 10%. This is likely due to the superior nature and/or light absorption of the a-Si:H material developed, improved P/I interface properties in their deposited solar cells, etc.…”

Section: Introductionmentioning

confidence: 92%

Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

2016

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We have combined recent experimental developments in our laboratory with modelling to devise ways of maximising the stabilised efficiency of hydrogenated amorphous silicon (a-Si:H) PIN solar cells. The cells were fabricated using the conventional plasma enhanced chemical vapour deposition (PECVD) technique at various temperatures, pressures and gas flow ratios. A detailed electrical-optical simulator was used to examine the effect of using wide band gap P-and N-doped μc-SiOx:H layers, as well as a MgF2 anti-reflection coating (ARC) on cell performance. We find that with the best quality a-Si:H so far produced in our laboratory and optimised deposition parameters for the corresponding solar cell, we could not attain a 10% stabilised efficiency due to the high stabilised defect density of a-Si:H, although this landmark has been achieved in some laboratories. On the other hand, a close cousin of a-Si:H, hydrogenated polymorphous silicon (pm-Si:H), a nano-structured silicon thin film produced by PECVD under conditions close to powder formation, has been developed in our laboratory. This material has been shown to have a lower initial and stabilised defect density as well as higher hole mobility than a-Si:H. Modelling indicates that it is possible to attain stabilised efficiencies of 12% when pm-Si:H is incorporated in a solar cell, deposited in a NIP configuration to reduce the P/I interface defects and combined with P-and N-doped μc-SiOx:H layers and a MgF2 ARC.

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Preparation and measurement of highly efficient a‐Si:H single junction solar cells and the advantages of μc‐SiO_x:H n‐layers

Abstract: Reducing the optical losses and increasing the reflection while maintaining the function of doped layers at the back contact in solar cells are important issues for many photovoltaic applications.

Cited by 44 publications

References 30 publications

Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

Use of hexamethyldisiloxane for p-type microcrystalline silicon oxycarbide layers

Migration of Open Volume Deficiencies in Hydrogenated Amorphous Silicon During Annealing

Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

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