Functionalized Cyclohexyl methacrylate based Copolymers for Negative Resist

Karatsu, Takashi; Yoshimura, Yasuaki; Miura, Shingo; Yagai, Shiki; Kitamura, Akihiro; Ozaki, Jun; Okamoto, H.

doi:10.2494/photopolymer.24.535

Cited by 4 publications

(2 citation statements)

References 8 publications

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“…The higher exibility of longer side chain compared with the shorter side chain, might be expected to reduce potential steric hindrance, and has been shown to help improve the crosslinking. 42 Moreover, an increased chain length between the bulky side group and the main chain was also reported to improve the sensitivity of some other polymer based resists due to enhanced acid diffusion. 43 It has also been shown that for chemically amplied resists exposed via high energy techniques (such as electron beam lithography) the ability of the non-PAG components to be deprotonated can have a large effect on sensitivity.…”

Section: Sensitivity and Contrast Evaluationmentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

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Section: Sensitivity and Contrast Evaluationmentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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“…After exposure, negative image appeared by wiping by cloth with oily printing ink. Detailed mechanism is still under investigation [7].…”

Section: Introductionmentioning

confidence: 99%

Effect of Alkyl Group on the Photocrosslinking of Alkyl Methacrylate Based Copolymers

Karatsu

Narusawa

Yagai

et al. 2013

J. Photopol. Sci. Technol.

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Three series of alkyl methacrylate based copolymers having photo-reactive side chains (C=C double bond) were synthesized and examined their performances as photopolymer in the presence of suitable oxime ester or triazine type radical photo-initiators for 365 nm light. Along to our previous report showed that correlation was observed between photochemical reactivity and chain length of the side chain/density of reactive side chain in the cyclohexyl methacrylate main chain. Our proposed mechanism is that sterically stacked nonpolar cyclohexyl groups may push out the polar reactive side chains, and length and density of the side chain controls cross linking between two reactive sites in the single main chain or two different main chains. Now we have examined structural effect of the alkyl groups on the efficiency of photocrosslinking. We have examined 5 series and totally 15 polymers. As a result, cyclohexyl methacrylate based copolymer showed excellent performance for polymerization.

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