Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits

Liang, Kun; Ren, Huihui; Li, Dingwei; Wang, Yan; Tang, Yingjie; Zhao, Momo; Wang, Hong; Li, Wenbin; Zhu, Bowen

doi:10.1039/d1tc01512e

Cited by 27 publications

(17 citation statements)

References 38 publications

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“…The fully inkjet-printed InP/ZnSe QD/SnO 2 hybrid heterostructure TFTs were fabricated with a bottom-gate, top-contact configuration (see Experimental Section for more details). , Figure a shows the fabrication flow of the entire printing process. Prior to printing, a thin buffer layer of Al 2 O 3 was spin-coated onto the substrates to better control the diffusion of the printed inks.…”

Section: Resultsmentioning

confidence: 99%

Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

et al. 2022

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Optoelectronic synaptic transistors with hybrid heterostructure channels have been extensively developed to construct artificial visual systems, inspired by the human visual system. However, optoelectronic transistors taking full advantages of superior optoelectronic synaptic behaviors, low-cost processes, low-power consumption, and environmental benignity remained a challenge. Herein, we report a fully printed, high-performance optoelectronic synaptic transistor based on hybrid heterostructures of heavy-metal-free InP/ZnSe core/shell quantum dots (QDs) and n-type SnO 2 amorphous oxide semiconductors (AOSs). The elaborately designed heterojunction improves the separation efficiency of photoexcited charges, leading to high photoresponsivity and tunable synaptic weight changes. Under the coordinated modulation of electrical and optical modes, important biological synaptic behaviors, including excitatory postsynaptic current, short/long-term plasticity, and paired-pulse facilitation, were demonstrated with a low power consumption (∼5.6 pJ per event). The InP/ZnSe QD/SnO 2 based artificial vision system illustrated a significantly improved accuracy of 91% in image recognition, compared to that of bare SnO 2 based counterparts (58%). Combining the outstanding synaptic characteristics of both AOS materials and heterojunction structures, this work provides a printable, low-cost, and high-efficiency strategy to achieve advanced optoelectronic synapses for neuromorphic electronics and artificial intelligence.

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Section: Resultsmentioning

confidence: 99%

Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

et al. 2022

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“…Various patterning techniques have been developed to construct NC patterns, including inkjet printing, − laser or electron beam writing, nanoimprinting, , electrophoretic deposition, and photolithography . While inkjet printing and laser beam writing generally produce feature resolutions of patterning that are limited to a few tens of micrometers, well-established photolithography appears to be more appealing because it can facilely implement fine patterns with a resolution of submicrometer in a large area.…”

Section: Introductionmentioning

confidence: 99%

Direct Optical Patterning of Nanocrystal-Based Thin-Film Transistors and Light-Emitting Diodes through Native Ligand Cleavage

Wang

Shan

Tang

et al. 2022

ACS Appl. Nano Mater.

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Developing techniques of advanced patterning for colloidal nanocrystals (NCs) is essential to construct high-performance electronic/optoelectronic devices. However, conventional NC patterning methods require complicated photolithography processes and/or delicately designed photocrosslinkers. Here, we develop a direct, photoresist-free method to pattern functional NCs while avoiding any photosensitive molecules. In our approach, the solubility of NCs is switched through cleaving native organic ligands under UV light exposure. Developing with the mother solvent produces fine patterns with feature sizes (as low as 10 μm) comparable to that of conventional photolithography. Importantly, the obtained patterns of NCs allow postpatterning ligand exchange. As representatives, we demonstrate patterned NC-based thin-film transistors (TFTs) and quantum dot light-emitting diodes (QLEDs). The In2O3 NC-based TFTs are turned from inactive to active using the patterning process and display substantially enhanced electronic performances upon ligand exchange with inorganic ligands. Furthermore, exquisite fluorescence quantum dot (QD) patterns are enabled. The QLEDs fabricated with ZnCl2-treated green QD patterns exhibit electroluminescence performances that are comparable to those of unpatterned QLEDs. Our strategy offers a powerful yet simple patterning technique for fabricating low-temperature thin-film electronics and optoelectronics, which is expected to be a versatile and extensible approach for solution-processed NC-based thin-film device manufacturing.

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“…In line with the forthcoming industrial revolution, printed and flexible electronics is rapidly developing to cater the wearable and consumer electronics needs; large volume of devices would also be essential for wide range of sensors that are to be connected via Internet of Things (IoT). [1][2][3][4][5][6][7][8][9][10] In the solutionprocessed and printed electronics domain, oxide semiconductors have developed into a serious contender alongside their organic alternatives. Oxides possess typical advantages, such as abundance, low-cost, superior environmental/thermal stability, and most importantly, they demonstrate excellent electronic n-channel metal-oxide semiconductor (NMOS) TFTs.…”

Section: Introductionmentioning

confidence: 99%

“…[22][23][24][25][26][27][28] In contrast, all NMOS depletion-load inverters have become a popular choice in the recent times. [5,7,8,[29][30][31] In fact, one may expect relatively higher performance in this case, when only the superior NMOS TFTs are used. On the other hand, the fabrication routine for the depletion-load type inverters may actually be simpler with identical TFTs at the load and drive positions.…”

Section: Introductionmentioning

confidence: 99%

“…Naturally, the depletion-load type NMOS based all-oxide inverters have been reported more often, which include signal gain value as high as 198, albeit high operation voltage (V DD = 40 V) and annealing temperature have been necessary. [5,7,8,[29][30][31] Next, when it comes to AC performance, the general consensus is that the electrolyte-gated TFTs may not be suitable for higher operation frequency; indeed printed oxide TFTs based R-mode (resistor-transistor logic) NMOS inverters and ring oscillators have demonstrated operation frequency not more than 352 Hz. [32] In fact, the highest operation frequency that has been reported so far involving electrolyte gating is with ambipolar carbon nanotubes (CNTs), where a maximum switching frequency of 22 kHz has been reported.…”

Section: Introductionmentioning

confidence: 99%

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High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates

Divya

Pradhan

Priyadarsini

et al. 2022

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The major limitations of solution‐processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully‐printed narrow‐channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In2O3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In2O3 layer and thereby obtain near‐vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈106 and simultaneous maximum current density of 172 µA µm−1. Next, the depletion‐load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of VDD = 2 V. In addition, the near‐vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.

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Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits

Abstract: In this study, we achieved fully-printed flexible n-type tin oxide (SnO2) thin-film transistors (TFTs) and logic inverters. The SnO2 transistors exhibit outstanding performance with high saturation mobility of 13.3 cm2...

Cited by 27 publications

References 38 publications

Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot–Metal Oxide Semiconductor Heterojunctions

Direct Optical Patterning of Nanocrystal-Based Thin-Film Transistors and Light-Emitting Diodes through Native Ligand Cleavage

High Operation Frequency and Strain Tolerance of Fully Printed Oxide Thin Film Transistors and Circuits on PET Substrates

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