Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers

Wang, H.; Ng, Geok Ing; Lai, R.; Hwang, Y.; Lo, D.C.W.; Dia, R.M.; Freudenthal, A.; Block, T.

doi:10.1049/ip-map:19960506

Cited by 21 publications

(4 citation statements)

References 7 publications

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“…The space layer thickness and silicon doping were designed proportionally to accommodate sub-100-nm gate length devices and avoid potential short channel effects. The wafers were fabricated using our 3-in InP HEMT MMIC production process [5] via pad to be reduced to 80 m diameter, which lowers the source inductance by greater than 25% compared to the same via on a 75-m-thick substrate. Fig.…”

Section: Process Description and Device Resultsmentioning

confidence: 99%

An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

Lai¹,

Barsky²,

Huang³

et al. 1998

IEEE Microw. Guid. Wave Lett.

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We present the highest frequency performance of any solid-state monolithic microwave integrated circuit (MMIC) amplifier. A 2-stage 80-nm gate length InGaAs/InAlAs/InP HEMT MMIC balanced amplifier has a measured on-wafer peak gain of 7.2 dB at 190 GHz and greater than 5 dB gain from 170 to 194 GHz. The circuit was fabricated using a pseudomorphic 20-nm In 0:65 Ga 0:35 As channel HEMT structure grown on a 3-in InP substrate by MBE. Based on the measured circuit results, the intrinsic exhibits an F max greater than 400 GHz.

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Section: Process Description and Device Resultsmentioning

confidence: 99%

An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

Lai¹,

Barsky²,

Huang³

et al. 1998

IEEE Microw. Guid. Wave Lett.

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“…In addition, they are mostly used in the design of low noise amplifiers [2][3][4] and proven to be more advantageous that the AlGaAs/InGaAs pHEMTs [5].…”

Section: Introductionmentioning

confidence: 99%

“…These charges also give a rise to gate leakage current component and therefore contribute to the noise behaviour of the device. When considering the effect of C gd , the expressions of analytical model became as expressed in (4). The feedback capacitance C gd added to the model in (4) constitutes a major influence in the noise figure: the coupling capacitance make the drain noise current frequency dependent resulting to a rise in noise figure for frequencies beyond f t [18].…”

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confidence: 99%

Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

Djennati

Ghaffour

2017

IJECE

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In this paper, a noise revision of an InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistor (pHEMT) in presented. The noise performances of the device were predicted over a range of frequencies from 1GHz to 100GHz. The minimum noise figure (NFmin), the noise resistance (Rn) and optimum source impedance (Zopt) were extracted using two approaches. A physical model that includes diffusion noise and G-R noise models and an analytical model based on an improved PRC noise model that considers the feedback capacitance Cgd. The two approaches presented matched results allowing a good prediction of the noise behaviour. The pHEMT was used to design a single stage S-band low noise amplifier (LNA). The LNA demonstrated a gain of 12.6dB with a return loss coefficient of 2.6dB at the input and greater than -7dB in the output and an overall noise figure less than 1dB. Keyword:InAlAs INTRODUCTIONThe InAlAs/InGaAs/InP psoeudomorphic high electron mobility transistors (pHEMT) have exhibited excellent performances in terms of noise figure compared to MOSFET devices at RF and microwave fields [1]. In addition, they are mostly used in the design of low noise amplifiers [2-4] and proven to be more advantageous that the AlGaAs/InGaAs pHEMTs [5].Advanced circuit design that uses pHEMT, needs precise and accurate noise models, especially for their application in low noise MMIC. Many noise models have been reported in the literature: the wellknown Fukui's model [6], the equivalent noise temperature model by Pospieszalski [7] and the flicker noise model for HEMTs [8]. Many approaches on HEMT's noise parameters characterization ware investigated [9][10][11].In 1974, R.A. Pucel proposed a charge control based approach for a noise model in FET devices, the model is known as the PRC noise model [12]. Later in 1988, the model was used for HEMT devices in [13] and later improved by Zhi [14] where they included, in the PRC model, the temperature coefficients in order to calculate precise noise parameters for HEMTs.In this paper, we try to predict the noise performances at high frequency of an InAlAs/InGaAs/InP pHEMT by extracting the basic noise parameters using two approaches: a physical modelling and a mathematical modelling. This work is organized as follow: first, we discuss the different sources of noise in the pHEMT devices. Then, we make use of ATLAS from SILVACO TCAD suit, to simulate the noise behavior of a fabricated InAlAs/InGaAs/InP 250 nm gate length pHEMT. Next, we describe the analytical model based on the 2-port small-signal equivalent circuit of the device mentioned before and we calculate the

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“…In order to establish amplifier performance and implemented on TRWs baseline 75 nm diameter 0.1 um optimize the designs, it is ciltical to obtain test data at gate InP HEMT process [5][6]. The first is the growth and 0-7803-5968-2/00/$10.00 (C) 2000 EEE 139 these high frequencies.…”

Section: Device and Process Descriptionmentioning

confidence: 99%

MMIC low-noise amplifiers and applications above 100 GHz

Lai

Gaier

Nishimoto

et al.

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084)

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2): JPL Microwave, LIDAR, Pasadena, CA, 91 109 (email Todd.C.Gaier@jpl.nasa.gov) ABSTRACTdesign of pseudomorphic high indium composition In this paper we will present recent work on low InGaAs channels. Cutoff frequencies of 300 GHz have noise amplifiers developed for very high frequencies been achieved at the highest indium compositions above 100 GHz. These amplifiers were developed with a greater than 70%. The 2nd process enhancement was unique InP-based HEMT MMlC process. The amplifiers the reduction of the gate length from 100 nm to 70 nm. have been developed for both cryogenic and room 15-20% improvement in cutoff frequency and temperature amplifier applications with state-of-art transconductance was observed in the shorter gate performance demonstrated from 100 GHz to 21 5 GHz.length devices compared to the baseline 100 nm devices with similar gate finger yield. The third area is the

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Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers

Cited by 21 publications

References 7 publications

An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz

Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications

MMIC low-noise amplifiers and applications above 100 GHz

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