Fully numerical analysis of III-nitride based quantum dot lasers considering the quantum dots size distribution

Navaeipour, Parvin; Asgari, Asghar

doi:10.1016/j.ijleo.2014.08.133

Cited by 6 publications

(2 citation statements)

References 19 publications

(23 reference statements)

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“…The electrons of quantum dot are confined in three dimensions and the electron energy levels are discrete which is similar with that of an atom. The energy levels of QDs can be conveniently tuned by varying the QD size, composition and stress distribution to enrich its application fields such as QD lasers [5][6][7], LEDs [8][9][10], solar cells [11][12][13] and infrared detectors [14][15][16]. One of the approaches for growing QDs is Stranski-Krastanov (S-K) growth mode which deposits a thin layer of material on substrate under appropriate growth conditions by molecular beam epitaxy (MBE).…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

et al. 2019

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Stress and strain distributions in and around a single or two-coupled pyramidal InAs quantum dots (QDs) embedded in GaAs are calculated by finite element methods according to the continuum elasticity theory. By changing the quantum dot spacing and thickness of cap layer, the results about strain and stress distributions show compressive strain and stress distribution in the QDs and relaxation undergoes two stages with different speeds for different quantum dot height, quantum width and thickness of cap layer. The stress and strain distributions of pyramidal QDs would not vary monotonously with geometric dimensions. The height of quantum dot and cap layer thickness can effectively adjust the vertical correlation of self-assembly QDs according to the calculation. The shape of stress distribution at surface of cap layer can be tuned from a quadrangle into a circle by increasing the thickness of cap layer or decreasing the height of quantum dot. Also, a new approach to grow quantum ring is found in this paper. The calculations of two-coupled QDs show that the self-assembly technology might fail if the horizontal distance between two QDs is not large enough. The stress induced by upper QDs will be relaxed to zero with a longer distance downwards is found in this paper.

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Section: Introductionmentioning

confidence: 99%

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

et al. 2019

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“…Therefore, it is significant to study the dot density distribution and broadening in these materials. Moreover, broadenings in quantum dot laser play a crucial role not only for the spectral characteristics of the laser [ 6 ], but also for its carriers dynamics [ 7 ]. Homogenous broadening, which arises from Heisenberg uncertainty principle, decreases the carrier scattering and relaxation oscillation frequency in QD lasers [ 8 ].…”

Section: Introductionmentioning

confidence: 99%

Study and analysis of the optical absorption cross section and energy states broadenings in quantum dot lasers

Alghamdi

Bahnam

Karomi

2022

Heliyon

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Electric field effect on the quadratic electro optic effects and electro absorption process in GaN/AlGaN spherical quantum dot

Kouhi

2016

Optik

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Fully numerical analysis of III-nitride based quantum dot lasers considering the quantum dots size distribution

Cited by 6 publications

References 19 publications

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

Theoretical study of stress and strain distribution in coupled pyramidal InAs quantum dots embedded in GaAs by finite element method

Study and analysis of the optical absorption cross section and energy states broadenings in quantum dot lasers

Electric field effect on the quadratic electro optic effects and electro absorption process in GaN/AlGaN spherical quantum dot

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