Study and analysis of the optical absorption cross section and energy states broadenings in quantum dot lasers

Alghamdi, Mohammed S; Bahnam, Rafal Z.; Karomi, Ivan B.

doi:10.1016/j.heliyon.2022.e10587

Cited by 9 publications

(2 citation statements)

References 22 publications

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“…In [25], it was demonstrated that swiching between GS and ES lasing regimes is very fast-about several hundreds of picoseconds. The capability of In(As)P/AlGaInP/GaAs QD lasers for ultrafast light sources has been recently demonstrated [26,27].…”

Section: Experiments and Discussionmentioning

confidence: 99%

Hybrid multilevel-multiwavelength signaling scheme for optical data transmission

Maximov,

Shernyakov,

Gordeev

et al. 2023

Phys. Scr.

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We suggest an idea of data encoding scheme based on the switching from the ground state (GS) to excited state (ES) lasing in quantum dot (QD) lasers with increase in injection current. The groups of two bits are assigned to lasing spectra that comprise either one or both GS and/or ES lasing lines depending on injection current. We expect that the proposed encoding scheme can potentially combine some advantages of multilevel signaling and wavelength division multiplexing.

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Section: Experiments and Discussionmentioning

confidence: 99%

Hybrid multilevel-multiwavelength signaling scheme for optical data transmission

Maximov,

Shernyakov,

Gordeev

et al. 2023

Phys. Scr.

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“…nanostructured silicon has critically attractive attention due to its unique device structures such as high photoluminescence PL efficiency and large surface area. The visible spectrum generated from porous silicon, regardless of the crystalline Silicon band-gap of 1.12 eV has been attributed to the effects of the quantum size in the nanometer-sized silicon crystallites [8,9,10]. There are various techniques for producing porous silicon such as electrochemical etching, photoelectron chemical etching, chemical etching, and stain etching [11,12].…”

Section: Introductionmentioning

confidence: 99%

Performance of high sensitive heterojunction CuS/porous silicon photodetector

Ahmed,

Ali,

Daham

2024

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In this work, copper sulfide (CuS) nanostructure was deposited on a porous silicon wafer for the visible light by spray pyrolysis method. Through this, a series of devices were suggested as a part of the deposit concentration of CuS on n-type porous silicon. Simultaneously, the physical features of the attained film were illustrated. FESEM exhibited that the average nanoparticle diameter increased with the concentration of CuS at orientation (100) and was found to be 47.84 nm, 56.36nm and 71.32nm, while the average diameter at (111) orientation was found to be 37.64 nm, 41.46nm, 55.22 nm of 0.1, 0.3 and 0.5M respectively. In addition to the atomic force microscope (AFM) showed the roughness and uniformity of the CuS/PSi fabricated decreased with increasing concentration of CuS, In detail, the attained photo-responsivity and specific detectivity were observed to be 210 mW/A, 340 mW/A and 3×1010 Jones, 4.2×1010 Jones at orientation (100 )using concentration of 0.1M and 0.5M respectively . On the other hand, the photo-responsivity and specific detectivity were observed to be 260 mW/A, 380 mW/A and 1.8 ×1010 Jones, 4.5×1010 Jones at orientation (111) using concentrations of 0.1M and 0.5M respectively. The presented work shows a substitutional system for an economical and environmentally friendly optoelectronic scheme. The photo-responsive considered to be in a positive linear relationship with the used concentration.

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Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure

Sapra,

Mazumder,

Lohani

et al. 2024

Opt Quant Electron

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Study and analysis of the optical absorption cross section and energy states broadenings in quantum dot lasers

Cited by 9 publications

References 22 publications

Hybrid multilevel-multiwavelength signaling scheme for optical data transmission

Hybrid multilevel-multiwavelength signaling scheme for optical data transmission

Performance of high sensitive heterojunction CuS/porous silicon photodetector

Effect of compositionally co-related and orderly varying indium molar content on the performance of In0.15Ga0.85N/InxGa(1−x)N laser diode structure

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