Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz

Li, Hao; Rein, H.-M.; Suttorp, Thorsten; Böck, J.

doi:10.1109/jssc.2004.833552

Cited by 134 publications

(8 citation statements)

References 14 publications

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“…The push-push oscillator is based on the work published in [8] and provides a fundamental signal of 35 GHz and its second harmonic at 70 GHz simultaneously. The frequency can be adjusted by applying a tuning voltage between 0 and 5 V at the implemented varactors, leading to a frequency range from 130.6 to 156.1 GHz after the doubler.…”

Section: A Voltage Controlled Oscillatormentioning

confidence: 99%

An Automotive D-Band FMCW Radar Sensor Based on a SiGe-Transceiver MMIC

Sene

Reiter

Knapp

et al. 2022

IEEE Microw. Wireless Compon. Lett.

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This letter presents a 140-GHz frequencymodulated continuous-wave (FMCW) radar sensor for automotive applications. The monolithic microwave integrated circuit (MMIC) inside of the sensor features one transmit (TX) and one receive (RX) channel as well as the possibility to apply binary phase shift keying (BPSK) modulation to the transmitted signal. The chip is bonded on a printed circuit board (PCB) that features substrate integrated waveguides (SIWs) to minimize losses in the signal distribution. It provides rectangular waveguide (RWG) outputs for the D-band to facilitate the connection of measurement equipment and antennas. The complete sensor system is controlled by a backend board that is connected via pin headers on top of the RF board with the bonded chip.

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Section: A Voltage Controlled Oscillatormentioning

confidence: 99%

An Automotive D-Band FMCW Radar Sensor Based on a SiGe-Transceiver MMIC

Sene

Reiter

Knapp

et al. 2022

IEEE Microw. Wireless Compon. Lett.

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show abstract

“…However a very careful investigation of the safe operating area showed that devices can be operated above BV CE0 if the impedance at the base node is kept low. Using this approach a first SiGe VCO was demonstrated with sufficient output power, tuning range and phase noise needed for 77 GHz automotive radar applications [1]. First bare-die products used in commercial automotive radar systems have been qualified in 2009 [2].…”

Section: First Generation Sige Bipolar Technology For Automotive Rada...mentioning

confidence: 99%

“…Therefore, the cost of radar sensors was relatively high and the application seemed to be reserved for the high-end car segment. The demonstration of SiGe HBT based technology for radar sensors [1] was an important step to reduce system cost and to enable a higher market penetration of systems built with these highly integrated MMICs. In 2009 first SiGe based 77 GHz transceivers were introduced [2].…”

Section: Introductionmentioning

confidence: 99%

(Invited) SiGe Applications in Automotive Radars

et al. 2016

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An overview of the SiGe technologies used at Infineon Technologies for radar applications will be given. The production of bare-die chips started in 2009 using the bipolar technology B7HF200. Since 2012 packaged MMICs in an embedded wafer level ball grid array (eWLB) are available. Process challenges and solutions for radar chips in an eWLB package are presented. Examples of commercial SiGe radar chips in production are shown. Furthermore Infineon’s next generation BiCMOS technology B11HFC with fT of 250 GHz and fmax of 370 GHz is described. In addition, significant improvements of the cut-off frequencies can be achieved by replacing the currently used double-poly self-aligned configuration by a more advanced SiGe HBT architecture like IHP’s transistor module with selective base link epitaxy. The capability of this transistor cell for future BiCMOS generations was demonstrated by integrating it into Infineon’s 130 nm CMOS process. A transistor performance with fmax of 500 GHz was achieved.

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“…During the last decades, automotive radar has remained the main driver of innovation in the field of millimeter wave technology [1,2] opening up for applications in the field of security [3] and enabling highly integrated solutions for accurate level measurements [4] and non-destructive testing. [5][6][7] The latter application benefits considerably from better resolutions and high operating frequencies up to the terahertz range and its associated large signal bandwidths.…”

Section: Introductionmentioning

confidence: 99%

Extreme Ultra‐Wideband Optoelectronic Frequency‐Modulated Continuous‐Wave Terahertz Radar

Mohammadzadeh,

Keil,

Kocybik

et al. 2023

Laser & Photonics Reviews

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A novel photonic terahertz measurement system based on a frequency‐modulated continuous‐wave (FMCW) radar approach is presented. In previous works, fast frequency modulation has been demonstrated in connection with a continuous wave terahertz spectroscopy setup based on the photomixing principle. In this paper, a terahertz radar based on both a photomixing transmitter and a photomixing receiver, in contrast to the rigid spectroscopy approach, is reported. Hereby, frequency modulation bandwidths of more than 1.65 THz in radar operation is achieved. This corresponds to an order of magnitude more than what is previously achieved by terahertz radar systems. At the same time, measurement rates can be achieved that are comparable with radar systems based on Monolithic Microwave Integrated Circuits (MMICs) according to the current state of the art. Within the scope of the work, two operating modes are realized, one with a measurement rate of about 560 Hz at 600 GHz modulation bandwidth and one with 200 Hz at 1.65 THz modulation bandwidth, which can be set within the spectrum from 50 GHz to about 4.5 THz. The possibility to adjust the operating range of the radar without necessary hardware adaptations is another unique feature of the presented system, which allows the operator to choose a suitable frequency band that corresponds best to a certain measurement scheme via software settings. Besides the potential for multi‐layer thickness inspections, the capabilities of this technique for terahertz imaging applications are presented.

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Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive Radar systems and applications around 100 GHz

Cited by 134 publications

References 14 publications

An Automotive D-Band FMCW Radar Sensor Based on a SiGe-Transceiver MMIC

An Automotive D-Band FMCW Radar Sensor Based on a SiGe-Transceiver MMIC

(Invited) SiGe Applications in Automotive Radars

Extreme Ultra‐Wideband Optoelectronic Frequency‐Modulated Continuous‐Wave Terahertz Radar

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