Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in $\langle \hbox{001}\rangle$-,  $\langle \hbox{110}\rangle$-, and $\langle \hbox{111}\rangle$ -Oriented Si Nanowires

Niquet, Yann-Michel; Delerue, Christophe; Rideau, D.; Videau, Brice

doi:10.1109/ted.2012.2187788

Cited by 37 publications

(65 citation statements)

References 36 publications

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“…Figure 1 shows a slight decrease in mobility as the inversion charge increases, and this results from increasing intersub-band scattering at high fields [4]. It is worth pointing out that our results are in agreement with previous works [7,[28][29][30][31] using different physical models. The agreement of our results with full-band method (tight-binding) is a consequence of the similarity of the density of states between the confined phonons and bulk phonons.…”

Section: Electron-phonon Scattering In Gaa Si Nanowires (Low and Highsupporting

confidence: 91%

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

et al. 2016

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This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. The nanowire cross-sectional area is shown to have a significant impact on the phonon-limited mobility and on the current reduction. In a study of narrow Si nanowires we have examined the spatially resolved power dissipation and the validity of Joule's law. Our results show that only a fraction of the power is dissipated inside the drain region even for a relatively large simulated length extension (approximately 30 nm). When considering large source regions in the simulation domain, at low gate bias, a slight cooling of the source is observed. We have also studied the impact of College of Science and Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, UK the real part of phonon scattering self-energy on a narrow nanowire transistor. This real part is usually neglected in nanotransistor simulation, whereas we compute its impact on current-voltage characteristic and mobility. At low gate bias, the imaginary part strongly underestimated the current and the mobility by 50 %. At high gate bias, the two mobilities are similar and the effect on the current is negligible.Keywords Silicon and III-V nanowire field effect transistors · Non-equilibrium Green's functions · Electronphonon scattering self-energies · Phonon-limited mobility · Local power dissipation

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Section: Electron-phonon Scattering In Gaa Si Nanowires (Low and Highsupporting

confidence: 91%

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

et al. 2016

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“…Figure 7 illustrates how the impact of surface roughness scattering is more pronounced at higher sheet densities, and varies from one width to another, in agreement with published data [2]- [6]. Figure 8 shows the phonon-scattering limited mobility of square, circular, and elliptical nanowires, for different orientations, as a function of the cross section area.…”

Section: Resultssupporting

confidence: 86%

“…Considerable work has been carried out to evaluate the mobility of Si nanowires, relying mainly on the KuboGreenwood formalism [2]- [4], and to a lesser extent on Monte Carlo and other 1D Boltzmann equation solvers [5], and atomistic simulation methods [6]. However, more work is needed to evaluate the performance potential of NWTs with silicon and alternative material channels at the scaling limit.…”

Section: Introductionmentioning

confidence: 99%

One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

Sadi

Towie

Nedjalkov

et al. 2016

2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Abstract-In this paper, we employ a newly-developed one-dimensional multi-subband Monte Carlo (1DMSMC) simulation module to study electron transport in nanowire structures. The 1DMSMC simulation module is integrated into the GSS TCAD simulator GARAND coupling a MC electron trajectory simulation with a 3D Poisson-2D Schrödinger solver, and accounting for the modified acoustic phonon, optical phonon, and surface roughness scattering mechanisms. We apply the simulator to investigate the effect of the overlap factor, scattering mechanisms, material and geometrical properties on the mobility in silicon nanowire field-effect transistors (NWTs). This paper emphasizes the importance of using 1D models that include correctly quantum confinement and allow for a reliable prediction of the performance of NWTs at the scaling limits. Our simulator is a valuable tool for providing optimal designs for ultra-scaled NWTs, in terms of performance and reliability.

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“…The Boltzmann theory is a useful approach to model the low-field/linear-response mobility [29][30][31], as well as the high-field transport through Monte Carlo simulations [14,32,33]. Several studies have examined effects related to screening [34,35], scattering from out-ofplane vibrations [36], and performed atomistic calculations of the mobility from tight-binding [37][38][39] as well as electronphonon interaction's role in facilitating interlayer conduction [40] and current-induced heating [41,42]. Density functional theory (DFT) and atomistic methods can be used to assess the electronic structure and electron-phonon coupling in novel 2D materials where fitted deformation potential parameters are not available [43][44][45][46][47][48][49].…”

Section: Introductionmentioning

confidence: 99%

First-principles method for electron-phonon coupling and electron mobility: Applications to two-dimensional materials

et al. 2016

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We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS2. The material properties, including the electron-phonon interaction, are calculated from first-principles. We provide a detailed description of the normalized full-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes inelastic scattering processes. The bulk electron-phonon coupling is evaluated by a supercell method. The method employed is fully numerical and does therefore not require a semianalytic treatment of part of the problem and, importantly, it keeps the anisotropy information stored in the coupling as well as the band structure. In addition, we perform calculations of the low-field mobility and its dependence on carrier density and temperature to obtain a better understanding of transport in graphene, silicene and monolayer MoS2. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. We find that graphene has more than an order of magnitude higher mobility compared to silicene. For MoS2, we obtain several orders of magnitude lower mobilities in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented BTE solver applied in simulation tools based on first-principles and localized basis sets.

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Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in $\langle \hbox{001}\rangle$-, $\langle \hbox{110}\rangle$-, and $\langle \hbox{111}\rangle$ -Oriented Si Nanowires

Cited by 37 publications

References 36 publications

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

One-dimensional multi-subband Monte Carlo simulation of charge transport in Si nanowire transistors

First-principles method for electron-phonon coupling and electron mobility: Applications to two-dimensional materials

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