Fully analytical charge sheet model with quantum mechanical effects for short channel MOSFETs

Jayadeva, G. S.; DasGupta, Amitava

doi:10.1109/edst.2009.5166102

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…However, the inclusion of non-parabolicity in the quantum computations would make the analytical minimization of the total energy (necessary in the variational approach) very complex, due to the intricate formulation of the kinetic energy in the non-parabolic formalism. • 3/ The different energy levels are computed based on the triangular well effective field approximation, and the 2D quantum density is used instead of Boltzmann statistics [11], [21], [22], [23], [24]. It is therefore the most "physical" option, and allows to take several subbands into account.…”

Section: Introductionmentioning

confidence: 99%

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Hiblot

Mugny

Rafhay

et al. 2015

IEEE Trans. Nanotechnology

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In this work, Poisson-Schrödinger simulations of bulk MOSFETs with an InGaAs channel, including traps and non-parabolicity, are compared against experimental data. These simulations are later used to validate a compact model for the inversion charge in the channel as a function of the gate voltage. Finally, an expression for the long-channel drain current is derived from this inversion charge model, and confirmed with experimental data. This current model, adapted for alternative channel devices, is suitable for the evaluation of III-V MOSFET performance.options will be briefly reviewed to examine which one is the most appropriate for the implementation of III-V bulk MOSFETs in Mastar, which serves as a roadmap prediction tool [12].

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Section: Introductionmentioning

confidence: 99%

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Hiblot

Mugny

Rafhay

et al. 2015

IEEE Trans. Nanotechnology

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“…There have been many efforts to include second-order effects such as velocity saturation and short-channel effects in nano-scaled regime (see e.g., [11], [12]). Simplicity of the model is critical to obtaining analytical expressions for V read and V trip for sub-45 nm transistors.…”

Section: A I-v Modelmentioning

confidence: 99%

Probability calculation of read failures in nano-scaled SRAM cells under process variations

Aghababa

Ebrahimi

Afzali-Kusha

et al. 2012

Microelectronics Reliability

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Abstract-In this paper, we present an accurate method for predicting the read failure probability of SRAM cells. First, using a simple I-V model for transistors, analytical expressions for the V read and V trip of SRAM cells are obtained. These expressions are subsequently used to derive a fairly accurate model for the read margin of SRAM cells. Then, using Jacobian determinant, the joint probability density function for the V read and V trip is calculated without assuming any specific distribution function for its probability. The accuracy of the approach is studied by comparing its results with those of a previous technique and HSPICE-based Monte Carlo simulations for a 32 nm CMOS technology. The study shows that the proposed technique has on average about 31% lower error when compared to the previous approach. In addition to a higher accuracy, the method has the advantage of not being restricted to a specific probability distribution form.

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Analytical modeling of read stability metric of SRAM cell in nanoscale era

Ebrahimi

Aghababa

Afzali-Kusha

2010

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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Fully analytical charge sheet model with quantum mechanical effects for short channel MOSFETs

Cited by 3 publications

References 13 publications

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Probability calculation of read failures in nano-scaled SRAM cells under process variations

Analytical modeling of read stability metric of SRAM cell in nanoscale era

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