Full three-dimensional numerical analysis of multi-collector magnetotransistors with directional sensitivity

Riccobene, C.; Gärtner, Klaus; Wachutka, G.; Baltes, H.; Fichtner, W.

doi:10.1016/0924-4247(94)00907-y

Cited by 12 publications

(2 citation statements)

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“…An example is FASTHENRY [86], a mixed boundary-element/finite-element inductance-extraction tool (for nonmagnetic materials) that self-consistently computes the sinusoidal-steady-state current distribution within conductors based on the skin effect, and the corresponding sinusoidal-steady-state -impedance matrix for the network. Another example is the use of semiconductor device simulators, enhanced with distributed Lorentz-force terms, to calculate the steady-state behavior of various semiconductor magnetic-sensing devices, such as Halleffect devices and magnetotransistors [87]- [91].…”

Section: The Effect Of Dissipationmentioning

confidence: 99%

CAD challenges for microsensors, microactuators, and microsystems

Senturia

1998

Proc. IEEE

169

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In parallel with the development of new technologies, new device configurations, and new applications for microsensors, microactuators, and microsystems, also referred to as microelectromechanical devices and systems (MEMS), there has arisen a growing need for computer-aided engineering and design systems. There is a wide range of design problems: process simulation, solid-body geometric renderings from photomasks and process descriptions, energetically correct simulation of behavior across multiple coupled energy domains, extraction of lumped low-order models of device behavior, optimization of geometry and process sequence, and design of full systems that include MEMS devices. Because of the computational demands of the modeling required to support full computer-aided design (CAD), there is a premium on fast and memory-efficient algorithms that help the designer, both by automating, where possible, complex sets of related tasks and by providing rapid computational prototyping at critical points in the design cycle. This paper presents an overview of the present state of the art in CAD for MEMS, with particular emphasis on the role of macromodels and test structures as part of the design environment.

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Section: The Effect Of Dissipationmentioning

confidence: 99%

CAD challenges for microsensors, microactuators, and microsystems

Senturia

1998

Proc. IEEE

169

View full text Add to dashboard Cite

show abstract

“…Dual collector magneto-transistors have been studied in great detail (Hudson, 1968;Davies & Wells, 1971;Vikulin, Glauberman, Vikulina, & Zaporozhchenko, 1974;Vinal & Masnari, 1982;Kordic, Zieren, & Middlehoek, 1983;Baltes & Popovic, 1986;Cristoloveanu, 1981;Mitnikova, Persiyanov, Rekalova, & Shtyubner, 1978;Andreou & Westgate, 1984;Ristic, Smy, & Baltes, 1988;Nathan, Maenaka, Allegretto, Baltes, & T Nakamura, 1989;Roumenin, 1994;Riccobene, Gartner, Wachutka, Baltes, & Fichtner, 1995;Chaplygin, Galushkov, Romanov, & Volkov, 1995;Kang, Lee, & Han, 1996;Metz, 1999;Nagy & Trujillo, 1998;Amelichev, Galushkov, Mirgorodskii, Tikhomirov, Chaplygin, Shorin, & Shubin, 1999;Vikulin, I., Vikulina, L., & Stafeev, 2001;Tikhonov, 2005;Oxland, Long, & Rahman, 2009;Hnatiuc & Căruntu, 2009;Leepattarapongpan, Phetchakul, Penpondee, Pengpad, Chaowicharat, Hruanun, & Poyai, 2010;Amelichev, Tikhonov, & Cheremisinov, 2013;Tikhonov, 2013); however, they are not in use because of a large initial potential imbalance. The analysis (Metz, 1999) of this imbalance was based on the assumption of asymmetric structure.…”

Section: Introductionmentioning

confidence: 99%