Full ETSI E-Band Doubler, Quadrupler and 24 dBm Power Amplifier

Rodriguez, Melissa C.; Tarazi, Jabra; Dadello, A.; Convert, Emmanuelle R. O.; McCulloch, MacCrae G.; Mahon, Simon J.; Hwang, Steve; Mould, Rodney G.; Fattorini, Anthony P.; Young, Alan C.; Parker, Anthony E.; Heimlich, Michael; Wang, Wenkai

doi:10.1109/csics.2012.6340084

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Cited by 8 publications

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“…At E-band, GaN PAs [7] deliver more than 1 W OUT due to the high breakdown voltage while InP PAs [6] achieve PAE as high as 40% thanks to the high / MAX . Nevertheless, GaAs technology [8][9][10] has the advantages of relatively low cost, high yield, and easy foundry access, offering an attractive alternative for E-band applications.…”

Section: Introductionmentioning

confidence: 99%

A 0.45 W 18% PAE E‐Band Power Amplifier in 100 nm InGaAs pHEMT Technology

Zhao

2018

Wireless Communications and Mobile Computing

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This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz.

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