Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Bui, Ha Quoc Thang; Velpula, Ravi Teja; Jain, Barsha; Aref, Omar Hamed; Nguyen, Hoang-Duy; Lenka, Trupti Ranjan; Nguyen, Hieu Pham Trung

doi:10.3390/mi10080492

Cited by 57 publications

(45 citation statements)

References 53 publications

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“…In recent years, nanowires originated from a wide variety of materials have arisen as a centerpiece for optoelectronic applications such as sensors, solar cells, optical filters, displays, light-emitting diodes and photodetectors [1][2][3][4][5][6][7][8][9][10][11][12]. Tractable but outstanding, optical features of nanowire arrays achieved by modulating its physical properties (e.g., diameter, height and pitch) allow to confine and absorb the incident light considerably, albeit its compact configuration.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Vertically Aligned Nanowires for Photonics Applications

2020

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Over the past few decades, nanowires have arisen as a centerpiece in various fields of application from electronics to photonics, and, recently, even in bio-devices. Vertically aligned nanowires are a particularly decent example of commercially manufacturable nanostructures with regard to its packing fraction and matured fabrication techniques, which is promising for mass-production and low fabrication cost. Here, we track recent advances in vertically aligned nanowires focused in the area of photonics applications. Begin with the core optical properties in nanowires, this review mainly highlights the photonics applications such as light-emitting diodes, lasers, spectral filters, structural coloration and artificial retina using vertically aligned nanowires with the essential fabrication methods based on top-down and bottom-up approaches. Finally, the remaining challenges will be briefly discussed to provide future directions.

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Section: Introductionmentioning

confidence: 99%

Recent Advances in Vertically Aligned Nanowires for Photonics Applications

2020

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“…Due to the large surface-to-volume ratios of the 1D nanomaterials, the surface plays a key role in the optical properties of 1D nanometer material LEDs [80][81][82][83][84][85][86][87][88][89][90]. Due to the existence of surface states, a Fermi-level pinning effect will occur, and the resulting transverse electric field effect and related surface non-radiative recombination will be very unfavorable to one-dimensional nanostructured-led devices [80][81][82].…”

Section: Core/shell Structure Methodsmentioning

confidence: 99%

“…It can be proved by the experimental results that white LEDs based on dodecagonal ring structures are a platform enabling a high-efficiency warm white light-emitting source. Recently, high-performance InGaN/GaN and InGaN/AlGaN nanowire heterostructure LEDs were prepared by different research groups [88][89][90][91][92][93][94]. A schematic diagram of a nanowire LED with an InGaN/AlGaN core-shell heterostructure is shown in Figure 5.…”

Section: Core/shell Structure Methodsmentioning

confidence: 99%

Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

et al. 2019

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With the rise of nanoscience and nanotechnologies, especially the continuous deepening of research on low-dimensional materials and structures, various kinds of light-emitting devices based on nanometer-structured materials are gradually becoming the natural candidates for the next generation of advanced optoelectronic devices with improved performance through engineering their interface/surface properties. As dimensions of light-emitting devices are scaled down to the nanoscale, the plentitude of their surface/interface properties is one of the key factors for their dominating device performance. In this paper, firstly, the generation, classification, and influence of surface/interface states on nanometer optical devices will be given theoretically. Secondly, the relationship between the surface/interface properties and light-emitting diode device performance will be investigated, and the related physical mechanisms will be revealed by introducing classic examples. Especially, how to improve the performance of light-emitting diodes by using factors such as the surface/interface purification, quantum dots (QDs)-emitting layer, surface ligands, optimization of device architecture, and so on will be summarized. Finally, we explore the main influencing actors of research breakthroughs related to the surface/interface properties on the current and future applications for nanostructured light-emitting devices.

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“…By horizontally arranging an RGB LED array composed of this nanowire structure, multi-color emissions can be easily generated. Therefore, nanowire LEDs have been widely studied for their possible use in full-color displays [ 108 , 109 , 110 , 111 ]. Compared with conventional InGaN/GaN quantum-well LEDs, nanowire heterostructures have many obvious advantages, including greatly reducing the dislocation density and polarization field in the active region of the device, improving the light extraction efficiency, and offering good compatibility with low-cost, large-area silicon substrates [ 112 , 113 , 114 , 115 ].…”

Section: Monolithic Multi-color Growth Technologymentioning

confidence: 99%

Full-Color Realization of Micro-LED Displays

et al. 2020

Nanomaterials

140

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Emerging technologies, such as smart wearable devices, augmented reality (AR)/virtual reality (VR) displays, and naked-eye 3D projection, have gradually entered our lives, accompanied by an urgent market demand for high-end display technologies. Ultra-high-resolution displays, flexible displays, and transparent displays are all important types of future display technology, and traditional display technology cannot meet the relevant requirements. Micro-light-emitting diodes (micro-LEDs), which have the advantages of a high contrast, a short response time, a wide color gamut, low power consumption, and a long life, are expected to replace traditional liquid-crystal displays (LCD) and organic light-emitting diodes (OLED) screens and become the leaders in the next generation of display technology. However, there are two major obstacles to moving micro-LEDs from the laboratory to the commercial market. One is improving the yield rate and reducing the cost of the mass transfer of micro-LEDs, and the other is realizing a full-color display using micro-LED chips. This review will outline the three main methods for applying current micro-LED full-color displays, red, green, and blue (RGB) three-color micro-LED transfer technology, color conversion technology, and single-chip multi-color growth technology, to summarize present-day micro-LED full-color display technologies and help guide the follow-up research.

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Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays

Cited by 57 publications

References 53 publications

Recent Advances in Vertically Aligned Nanowires for Photonics Applications

Recent Advances in Vertically Aligned Nanowires for Photonics Applications

Surface/Interface Engineering for Constructing Advanced Nanostructured Light-Emitting Diodes with Improved Performance: A Brief Review

Full-Color Realization of Micro-LED Displays

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