Recent Advances in Vertically Aligned Nanowires for Photonics Applications

Abstract

Over the past few decades, nanowires have arisen as a centerpiece in various fields of application from electronics to photonics, and, recently, even in bio-devices. Vertically aligned nanowires are a particularly decent example of commercially manufacturable nanostructures with regard to its packing fraction and matured fabrication techniques, which is promising for mass-production and low fabrication cost. Here, we track recent advances in vertically aligned nanowires focused in the area of photonics applications. Begin with the core optical properties in nanowires, this review mainly highlights the photonics applications such as light-emitting diodes, lasers, spectral filters, structural coloration and artificial retina using vertically aligned nanowires with the essential fabrication methods based on top-down and bottom-up approaches. Finally, the remaining challenges will be briefly discussed to provide future directions.

Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructures

“…Metal halide perovskite (MHP) nanowire arrays have shown excellent performance in optoelectronic applications such as lasers, LEDs, solar cells, and photodetection. − Vertically aligned nanowire arrays offer several advantageous properties, such as enhanced optical absorption and emission along the direction orthogonal to the substrate, which is essential for solar cells and light-emitting diodes, − as well as technical advantages including higher nanowire density and scalable device processing. For example, free-standing vertically aligned nanowires of Si, ZnO, GaAs, and InP have achieved excellent performance in various optoelectronic fields. − However, the growth of free-standing vertically aligned MHP nanowire arrays is difficult.…”

Large Dense Periodic Arrays of Vertically Aligned Sharp Silicon Nanocones

“…Here, vertical alignment is defined as the situation in which all apices of the structures are in the same plane, parallel to the flat (i.e. horizontal) substrate surface [47].…”

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

“…Нитевидные нанокристаллы (ННК) A III B V являются перспективными объектами для создания на их основе различных элементов и устройств фотоники, микро-и наноэлектроники, микромеханики и сенсорики благодаря сочетанию уникальных электронных, оптических и механических свойств [1][2][3][4]. Создание устройств на основе ННК требует разработки технологий управления их основными характеристиками (как вместе, так и по отдельности): размерами (длиной, диаметром), формой, химическим составом, легированием, плотностью [5].…”