The kinetics of the charge–carrier recombination in double-layer organic light-emitting diodes composed of indium–tin–oxide/N,N′-di(naphthalene-1-yl)-N,N′ -diphenyl-benzidine/beryllium complexes/LiF/Al were studied by transient electroluminescence (EL). Two blue-emitting materials of bis[2-(2-hydroxyphenyl)-pyridine]beryllium (Bepp2) and bis[2-(2-hydroxytoluenyl)-pyridine]beryllium (Betp2) were used as the emissive layer. It was found that the EL efficiency of the Bepp2-based devices was higher than that of the Betp2-based devices. The improvement of the EL efficiency was well interpreted by the results that the Bepp2 shows higher electron mobility and electron–hole recombination coefficients (γ) than Betp2, which are determined from the onset of the transient EL after a rectangular voltage pulse is applied, and from the long-time component of the temporal decay of the EL intensity after the voltage pulse is turned off. The electron mobility and the recombination coefficients γ of the Bepp2 reached 6 × 10−6 cm2 V−1 s−1 and 7.3 × 10−12 cm3 s−1, respectively, which are approximately twice the magnitude of the Betp2.