Front Matter: Volume 9425

doi:10.1117/12.2193847

Advances in Patterning Materials and Processes XXXII 2015

DOI: 10.1117/12.2193847

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Front Matter: Volume 9425

Abstract: We have synthesized a new resist molecule and investigated its high-resolution capability. The material showed resolved line-spaces with 14 nm half-pitch (hp) and the potential to pattern 11 nm hp features. Line edge roughness values as low as 3.15 nm were seen in optimized formulations. The dose-to-size is estimated at around 20-30 mJ/cm 2 . The role of the molecule in the patterning process was studied by comparing it with structurally similar compounds. Furthermore we present first results from exposures of… Show more

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Cited by 2 publications

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Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists

Narcross

Sharp

Ludovice

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Controlling undesired polymerization in nominally unexposed regions is critical to achieving high-resolution, defect-free patterns when using negative tone molecular resists based on the crosslinking of epoxides. Two onium salt additives, a photodecomposable nucleophile (PDN) and a photoacid generator (PAG), were functionalized with phenols in order to investigate their use as generalized additives capable of slowing crosslinking and improving the resolution of a variety of epoxide resists. Presented here is a phenol-functionalized PDN [tris(4-hydroxyphenyl)sulfonium triflate (TPS-OH-Tf)] and a phenol-functionalized PAG [tris(4-hydroxyphenyl)sulfonium antimonate (TPS-OH-SbF6)] used in combination with a model epoxide resist (4-Ep). Utilizing additives that contained phenols resulted in a decrease in resist sensitivity, but enabled higher additive loadings which could be used to offset this loss in sensitivity. Using TPS-OH-SbF6 did not provide enough polymerization control to prevent line broadening, and the use of TPS-OH-Tf was still required to achieve sub 35 nm 1:1 line:space patterns. Adding TPS-OH-Tf was also found to improve pattern collapse behavior at reduced (<25 nm) feature sizes. Initial patterning using 100 keV electron-beam lithography showed that the resolution of 4-Ep was improved to 15 nm 1:1 line:space patterns using these phenol-functionalized additives and demonstrate the potential of these additives to improve the resolution of a variety of epoxide crosslinking molecular resists.

show abstract

Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists

Narcross

Sharp

Ludovice

et al. 2018

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Structural effects on the performance of epoxide-based negative-tone molecular resists

Sharp

Narcross

Ludovice

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Several 0.26N tetramethylammonium hydroxide (TMAH)-soluble epoxide molecular resists have been synthesized and are reported here. Previously, the patterning performance of 1,1,2,2-tetrakis(p-hydroxyphenyl)ethane-3 epoxide (TPOE-3Ep) was reported and resolved 26 nm lines using extreme ultraviolet lithography. Here, a deeper study is performed to determine the effects of various structural features on the lithographic performance of 0.26N TMAH-soluble molecular resists. Increasing the number of phenols resulted in a notable increase in the glass transition temperature (Tg) of these materials, which required high postexposure bake (PEB) temperatures to achieve normalized remaining thickness (NRT) values of 1 in methyl isobutyl ketone development. Such high PEB temperatures resulted in insoluble material (high NRT values) in unexposed regions in the 248 nm contrast curves. Methyl groups were introduced adjacent to the hydroxyl group of phenol in an attempt to lower the Tg of the resists to allow the use of lower PEB temperatures. The methyl groups only slightly lowered the Tg of the resists, while detrimentally reducing the final NRT. Thus, instead of using the TPOE core or its methylated analog, a smaller core was used, and the resist trihydroxyphenyl ethane (THPE)-2Ep was designed and synthesized to be a low-Tg base-soluble resist. THPE-2Ep has a Tg of 41 °C and showed promising early performance using e-beam lithography and resolves 30 nm lines in 0.26N TMAH developer at a dose of 72 μC/cm2 at a PEB of 50 °C.

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Front Matter: Volume 9425

Cited by 2 publications

References 4 publications

Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists

Phenol-functionalized polymerization control additives for negative tone epoxide crosslinking molecular resists

Structural effects on the performance of epoxide-based negative-tone molecular resists

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