Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

Semendy, Fred; Singh, Sonika; Litz, M.; Wijewarnasuriya, P. S.; Blaine, Kara; Dhar, Nibir K.

doi:10.1016/j.sse.2009.09.011

Cited by 4 publications

(3 citation statements)

References 7 publications

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“…However, in this work, it is more convenient to improve the breakdown voltage using the hybrid structure, which can obtain a breakdown voltage of more than 1500 V. Table 1 shows the comparison of surface barrier detector or radiation detector with different guard rings designed to improve the breakdown voltage. The device was reported in the references and uses an ion−implant B/P at the metal border as the edge termination [9,[22][23][24][25][26]. The device can obtain a breakdown voltage of more than 500 V. The field plate structure is commonly used to increase the breakdown voltage of the radiation detector, as reported in works by Boughedda [22] and Bortoletto [24].…”

Section: Effect Of Guard Rings On Hybrid-ssbd Parametersmentioning

confidence: 99%

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Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

Wang

Jia

et al. 2022

Micromachines

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Silicon surface barrier detectors (SSBDs) are normally used to detect high−energy particles due to their excellent properties. For better charge collection efficiency (CCE), the SSBD device should be operated at higher reverse voltages, but this can lead to device breakdown. Therefore, we used a PN junction as a guard ring to increase the breakdown voltage of the SSBD. The structures of two SSBD devices are drawn and simulated in this work. Compared with a conventional SSBD (c−SSBD), the use of a PN junction as a guard ring for an SSBD (Hybrid−SSBD) achieves higher breakdown voltages, of over 1500 V under reverse bias. This means that Hybrid−SSBD devices can operate at higher reverse voltages for better charge collection efficiency (CCE) to detect high−energy particles. Then, we simulated the different structure parameters of the Hybrid−SSBD guard rings. Among them, the doping depth and gap width of the guard ring (between the innermost guard ring and the active area) have a greater impact on the breakdown voltage. Finally, for Hybrid−SSBD devices, the optimal characteristics of the guard ring were 1 × 1019 cm−3 doping concentration, 1 μm doping depth, and innermost guard ring width and gap width of 5 μm and 3 μm, respectively.

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Section: Effect Of Guard Rings On Hybrid-ssbd Parametersmentioning

confidence: 99%

“…A.Boughedda [22] Planar radiation detectors >10 k <700 V M.H. Joo [23] Au/n−Si Schottky diode 1 <400 V D. Bortoletto [24] Multi−guard ring p−type bulk diodes >10 k <1000 V H. G. Li [25] PtSi/Si−nanostructure detectors 20-30 100 V F. Semendy [26] Si−GaAs Schottky detectors 6.9 × 10 7 <1000 V…”

Section: Breakdown Voltage (V)mentioning

confidence: 99%

Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

Wang

Jia

et al. 2022

Micromachines

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“…Recently, Gallium Arsenide (GaAs) has got its attention in medical X-ray imaging in the range 5-30 keV [2][3][4][5][6][7][8][9]. The commercial imagers were a combination of a scintillator material coupled to an array of Si Silicon (Si) photodiodes.…”

Section: Introductionmentioning

confidence: 99%

Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy

Mouleeswaran

Koyama

Hayakawa

2013

Journal of Crystal Growth

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Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes

Yeganeh

Rahmatallahpur²,

Nozad³

et al. 2010

Chinese Phys. B

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Small high-quality Au/n type-GaAs Schottky barrier diodes (SBDs) with low reverse leakage current are produced using lithography. Their effective barrier heights (BHs) and ideality factors from current-voltage (I-V ) characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope (AFM) shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 µm up to 200 µm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.

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Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

Cited by 4 publications

References 7 publications

Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

Simulation of Silicon Surface Barrier Detector with PN Junction Guard Rings to Improve the Breakdown Voltage

Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy

Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes

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