From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

Leray, J.L.; Dupont‐Nivet, E.; Musseau, O.; Coïc, Yves-Marie; Umbert, A.; Lalande, P.; Pere, J.F.; Auberton‐Hervé, A.J.; Bruel, M.; Jaussaud, C.; Margail, J.; Giffard, B.; Truche, R.; Martín, F.

doi:10.1109/23.25464

Cited by 65 publications

(14 citation statements)

References 6 publications

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“…Thc HSOI3-HD tcchnology is a polycide gate CMOS-SO1 process [2,31. Thc SIMOX substrate is realized by 200 keV O+ ion implantation at 500-700OC followed by annealing at 1300-1 350OC.…”

Section: Methodsmentioning

confidence: 99%

Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

Faccio

Bianchi

Fornasari

et al. 1994

IEEE Trans. Nucl. Sci.

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Thc analog performance of the Thomson HSOI3-HD tcchnology has becn mcasurcd up to a total dose of 12 Mrad(Si) of ionizing radiation (60Co). The thrcshold voltage shift is -170 m V for p-channel and -20 m V for n-channel transistors. Transconductancc degradation is respectively 4% and 17%. Noise has been mcasurcd in thc 500 Hz-25 MHz bandwidth. In addition to thc I/f and whitc noise, a gencration-rccombination contribution appears in thc noisc spectrum. This contribution is scnsitivc to the bias applied to the backgatc and body electrodes. Thc whitc noisc incrcasc aftcr irradiation is 16% for p-channel and 35% for nchanncl transistors. p-channel transistors havc vcry low 1/f noise and arc less sensitive to irradiation effccts.

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“…Thc HSOI3-HD tcchnology is a polycide gate CMOS-SO1 process [2,31. Thc SIMOX substrate is realized by 200 keV O+ ion implantation at 500-700OC followed by annealing at 1300-1 350OC.…”

Section: Methodsmentioning

confidence: 99%

Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

Faccio

Bianchi

Fornasari

et al. 1994

IEEE Trans. Nucl. Sci.

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“…It is possible to harden partially depleted SOI transistors such that they can withstand high doses of gamma or X-rays [1]. Dose hardening of fully depleted SOI devices is much more elusive because of the coupling between front and back gates and the impossibility of realizing a high-threshold back interface [2].…”

Section: Introductionmentioning

confidence: 99%

Dose radiation effects in FinFETs

Chan

Orozco

et al. 2006

Solid-State Electronics

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“…Even relatively immune SOI technology has been shown to display soft errors [1], [2]. Modeling of individual devices and full circuits using a variety of simulation tools has been undertaken to understand and predict soft error rates (SER) due to -particles, heavy ions, and cosmic rays [3]- [5].…”

Section: Introductionmentioning

confidence: 99%

Theoretical determination of the temporal and spatial structure of /spl alpha/-particle induced electron-hole pair generation in silicon

Oldiges

Dennard

Heidel

et al. 2000

IEEE Trans. Nucl. Sci.

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Physics-based modeling of the impact ionization process in silicon was performed to determine the time constants and radial distribution of electron-hole pairs after an -particle strike. The radial distribution exhibited a Gaussian shape with a radius of approximately 50 nm. The impact ionization process took place over a period of less than approximately 500 fsec, implying time constants for use in semiconductor device simulations on the order of a few hundred fsec, a value much smaller than has been used in earlier device simulation work. Device simulations then show that the implication of using these shorter time constants is the creation of a higher concentration of electron-hole pairs at shorter times that cause stronger shunting effects for -particle strikes between source and drain of MOS transistors.

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From substrate to VLSI: investigation of hardened SIMOX without epitaxy, for dose, dose rate and SEU phenomena

Cited by 65 publications

References 6 publications

Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

Noise characterization of transistors in a 1.2 /spl mu/m CMOS-SOI technology up to a total-dose of 12 Mrad (Si)

Dose radiation effects in FinFETs

Theoretical determination of the temporal and spatial structure of /spl alpha/-particle induced electron-hole pair generation in silicon

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