From powder to nanowire: a simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Wang, Yuqing; Wang, Ru-Zhi; Li, Yujie; Zhang, Yuefei; Zhu, Mankang; Wang, Biben; Yan, Hui

doi:10.1039/c2ce26555a

Cited by 22 publications

(16 citation statements)

References 48 publications

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“…GaN material is a chemically and mechanically stable. It has a high thermal conductivity and a high mobility [41,42]. GaN material is considered as an excellent choice for efficient and durable device fabrication [43][44][45].…”

Section: Gan Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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Section: Gan Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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“…The thermal effect produced by Joule heating during electron emission can result in structural change of GaN nanoparticles because the small GaN nanoparticles have high surface energy, 29 as observed in the FE process of GaN nanowires. 38 It is possible that some small GaN nanoparticles break up under large current. In addition, the XPS results indicate that sample A contains the most adsorbed oxygen, so a great deal of oxygen is desorbed by Joule heating.…”

Section: Fe Properties Of Gan Nfsmentioning

confidence: 99%

Structural effects of field emission from GaN nanofilms on SiC substrates

Chen

Wang

Liu

et al. 2014

Journal of Applied Physics

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GaN nanofilms (NFs) with different structures are grown on SiC substrates by pulsed laser deposition under different conditions. The synthesized GaN NFs are studied by X-ray diffraction, field-emission (FE) scanning electron microscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. The GaN NFs are composed of diversified GaN nanoparticles with a diameter of 9-38 nm, thickness of 10-50 nm, and roughness of 0.22-13.03 nm. FE from the GaN NFs is structure dependent, which is explained by stress changing the band gap of the NFs. By structure modulation, the turn-on field of GaN NFs can be as low as 0.66 V/lm at a current density of 1 lA/cm 2 , with a current density of up to 1.1 mA/cm 2 at a field of 4.18 V/lm. Fowler-Nordheim curves of some samples contain multiple straight lines, which originate from the structural change and diversification of GaN nanoparticles under an applied field. Overall, our results suggest that GaN NFs with excellent FE properties can be prepared on SiC substrates, which provides a new route to fabricate high-efficiency FE nanodevices. V C 2014 AIP Publishing LLC. [http://dx.

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“…GaN powder and N plasma at about 2000°C were used as precursors to produce GaN NWs by plasma assisted hot filament CVD (PAHFCVD), by using Au as catalyst to help the GaN NWs growth [1,19]. It is often reported that concentrations of N vacancies and impurities increase due to high temperature synthesis of GaN nanostructures.…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, III-V family semiconductors have received considerable attention for microelectronic and optoelectronic applications [1]. In particular, GaN has a huge number of applications due to its wide and direct band gap, high melting point and high electrical breakdown field.…”

Section: Introductionmentioning

confidence: 99%