From diffusive to ballistic Stefan–Boltzmann heat transport in thin non-crystalline films

Abstract

Today, different theoretical models exist to describe heat transport in ultra-thin films with a thickness approaching the phonon mean free path length.

Quantifying thermal transport in buried semiconductor nanostructures via cross-sectional scanning thermal microscopy

“…samples of varied thicknesses therefore allowed to separate the contribution of the interfacial thermal resistance and sample thermal conductivity in order to deduce the quantitative properties. [35][36][37][38][39] For the quantification of the thermal properties, we expressed R X as a sum of two main components connected in series: the total contact thermal resistance between the probe and the sample, R c , and the total thermal spreading resistance within the sample, R s ,…”

Heat Transport Control and Thermal Characterization of Low-Dimensional Materials: A Review

“…However, SThM is considered to be ideal to investigate heat transport at nanoscale contacts and interfaces with sub-nW and sub-10 nm heat flux and thermal spatial resolution, respectively. The SThM technique has been employed recently to investigate heat transfer in semiconductor nanostructures, e.g., nanowires [ 115 , 157 , 158 , 159 ], supported thin films [ 145 , 160 , 161 ] and 2D materials [ 142 , 143 , 144 , 146 , 148 , 154 , 155 , 156 , 162 , 163 ]. For instance, recently El Sachat et al [ 144 ] performed high-vacuum SThM measurements to experimentally probe the transition from ballistic to diffusive thermal transport in suspended single-layer graphene.…”

Quantitative Mapping of Nanothermal Transport via Scanning Thermal Microscopy

“…Thin films on substrate [72][73][74] or even 2D materials [68,75,76] have been investigated. Complex structures can also be scanned as long as the surface is smooth enough to avoid dominance of topography-related artefacts [77][78][79].…”

“…5.1a ), we create an easily accessible surface well suited for scanning probe methods as reported elsewhere[158,160].In the case of SThM, the BEXP procedure is particularly powerful as it enables the measurement of a sample thermal resistance as the material thickens from the substrate to the surface. Furthermore, several reports have shown the necessity in SThM experiments to measure samples with several thicknesses to deduce quantitative properties[72][73][74]161]. This often requires a change of manufacturing process, preparation of special samples and does not allow measurement of the real devices.…”